62‐1: Invited Paper: Highly Stable Self‐Aligned Coplanar InGaZnO Thin‐Film Transistors and Investigation on Effective Channel Length †

2019 ◽  
Vol 50 (1) ◽  
pp. 874-877 ◽  
Author(s):  
Jung Bae Kim ◽  
Rodney Lim ◽  
Yun-chu (Pipi) Tsai ◽  
Jiarui Wang ◽  
Lai Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Effective Channel

Analysis of Effective Channel Length in Amorphous Silicon Thin-Film Transistors

1992 ◽  
Vol 31 (Part 1, No. 11) ◽  
pp. 3506-3510 ◽  
Author(s):  
Yoshiyuki Kaneko ◽  
Tooru Toyabe ◽  
Toshihisa Tsukada
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Silicon Thin Film ◽  
Effective Channel

Effect of Electrode Materials on the Electrical Characteristics of Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4325-4329
Author(s):  
Hosang Lee ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrode Materials ◽  
Thin Film Transistor ◽  
Channel Length ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Drain Electrode ◽  
Channel Region ◽  
Effective Channel

In this study, we investigated the effect of electrode materials on the electrical characteristics of coplanar top-gate a-ITGZO thin-film transistors, in which the gate, source, and drain electrodes were made of the same metal, Ti or Al. The field-effect mobilities of the a-ITGZO thin-film transistors with Ti and Al electrodes were 35.2 and 20.1 cm2/V·s, respectively, and the threshold voltage of the a-ITGZO thin-film transistor with Ti electrodes was −0.4 V, whereas that of the transistor with Al electrodes was −1.8; this shift is attributed to the fact that Ti has a higher work function than Al. When Ti was used as the source and drain electrode material, the channel resistance and effective channel length were reduced owing to the penetration of metal atoms into the channel region from the edge of the source/drain electrodes.

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing

2011 ◽  
Vol 14 (8) ◽  
pp. H333 ◽  
Author(s):  
Minseok Kim ◽  
In-Kyu You ◽  
Hyun Han ◽  
Soon-Won Jung ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Offset Printing ◽  
Short Channel
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