31.5: Invited Paper: Colloidal Quantum Dots and Their Applications in Hybrid Optoelectronic Devices

2018 ◽  
Vol 49 ◽  
pp. 345-347
Author(s):  
Chien-chung Lin
Keyword(s):  
Quantum Dots ◽  
Optoelectronic Devices ◽  
Colloidal Quantum Dots

Optical Characterization of CdSe Colloidal Quantum Dot/ MEH-PPV Polymer Nanocomposites Spin-cast on GaAs Substrates

2006 ◽  
Vol 939 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Abhishek Gupta ◽  
Zhiya Zhao
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Optoelectronic Devices ◽  
Photogenerated Electron ◽  
Polymer Nanocomposite ◽  
Colloidal Quantum Dots ◽  
Infrared Light ◽  
Gaas Substrates ◽  
Conducting Polymer Nanocomposite ◽  
Colloidal Quantum Dot

ABSTRACTThe motivation and distinct approach for this work is the use of intraband transitions within colloidal quantum dots for the detection of mid- (3-5 μm) and/or long-wave (8-14 μm) infrared light. The CdSe colloidal quantum dot/MEH-PPV conducting polymer nanocomposite material is well-suited for this application due to the ∼1.5 eV difference between the corresponding electron affinities. Therefore, CdSe colloidal quantum dots embedded in MEH-PPV should provide electron quantum confinement such that intraband transitions can occur in the conduction band. Further, it is desirable to deposit these nanocomposites on semiconductor substrates to enable charge transfer of photogenerated electron-hole pairs from the substrate to the nanocomposite. In this way, optoelectronic devices analogous to those achieved using Stranski-Krastanow quantum dots grown by epitaxy can be realized. To date, there have been relatively few investigations of colloidal quantum dot nanocomposites deposited on GaAs substrates. However, it is crucial to develop a better understanding of the optical properties of these hybrid material systems if such heterostructures are to be used for optoelectronic devices, such as infrared photodetectors. By depositing the nanocomposites on GaAs substrates featuring different doping characteristics and measuring the corresponding Fourier transform infrared absorbance, the feasibility of these intraband transitions is demonstrated at room temperature.

Colloidal quantum dots for optoelectronics

2017 ◽  
Vol 5 (26) ◽  
pp. 13252-13275 ◽  
Author(s):  
A. P. Litvin ◽  
I. V. Martynenko ◽  
F. Purcell-Milton ◽  
A. V. Baranov ◽  
A. V. Fedorov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Recent Progress ◽  
Photovoltaic Cells ◽  
Optoelectronic Devices ◽  
Colloidal Quantum Dots ◽  
New Concepts

This review is focused on new concepts and recent progress in the development of three major quantum dot (QD) based optoelectronic devices: photovoltaic cells, photodetectors and LEDs.

Colloidal quantum dot ligand engineering for high performance solar cells

2016 ◽  
Vol 9 (4) ◽  
pp. 1130-1143 ◽  
Author(s):  
Ruili Wang ◽  
Yuequn Shang ◽  
Pongsakorn Kanjanaboos ◽  
Wenjia Zhou ◽  
Zhijun Ning ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Optoelectronic Devices ◽  
Colloidal Quantum Dots ◽  
Solution Processed ◽  
Light Emitting ◽  
Colloidal Quantum Dot

Colloidal quantum dots (CQDs) are fast-improving materials for next-generation solution-processed optoelectronic devices such as solar cells, photocatalysis, light emitting diodes, and photodetectors.

scholarly journals Simple Cubic Self-Assembly of PbS Quantum Dots by Finely Controlled Ligand Removal through Gel Permeation Chromatography

2021 ◽  
Author(s):  
Jianjun Liu ◽  
Kazushi Enomoto ◽  
Kotaro Takeda ◽  
Daishi Inoue ◽  
Yong-Jin Pu
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Optoelectronic Devices ◽  
Gel Permeation Chromatography ◽  
Optoelectronic Properties ◽  
Colloidal Quantum Dots ◽  
Critical Importance ◽  
Simple Cubic ◽  
Gel Permeation ◽  
Pbs Quantum Dots

The geometry in self-assembled superlattices of colloidal quantum dots (QDs) strongly affects their optoelectronic properties and is thus of critical importance for applications in optoelectronic devices. Here, we achieve the...

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