Colloidal quantum dots for optoelectronics

2017 ◽  
Vol 5 (26) ◽  
pp. 13252-13275 ◽  
Author(s):  
A. P. Litvin ◽  
I. V. Martynenko ◽  
F. Purcell-Milton ◽  
A. V. Baranov ◽  
A. V. Fedorov ◽  
...  

This review is focused on new concepts and recent progress in the development of three major quantum dot (QD) based optoelectronic devices: photovoltaic cells, photodetectors and LEDs.

2006 ◽  
Vol 939 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Abhishek Gupta ◽  
Zhiya Zhao

ABSTRACTThe motivation and distinct approach for this work is the use of intraband transitions within colloidal quantum dots for the detection of mid- (3-5 μm) and/or long-wave (8-14 μm) infrared light. The CdSe colloidal quantum dot/MEH-PPV conducting polymer nanocomposite material is well-suited for this application due to the ∼1.5 eV difference between the corresponding electron affinities. Therefore, CdSe colloidal quantum dots embedded in MEH-PPV should provide electron quantum confinement such that intraband transitions can occur in the conduction band. Further, it is desirable to deposit these nanocomposites on semiconductor substrates to enable charge transfer of photogenerated electron-hole pairs from the substrate to the nanocomposite. In this way, optoelectronic devices analogous to those achieved using Stranski-Krastanow quantum dots grown by epitaxy can be realized. To date, there have been relatively few investigations of colloidal quantum dot nanocomposites deposited on GaAs substrates. However, it is crucial to develop a better understanding of the optical properties of these hybrid material systems if such heterostructures are to be used for optoelectronic devices, such as infrared photodetectors. By depositing the nanocomposites on GaAs substrates featuring different doping characteristics and measuring the corresponding Fourier transform infrared absorbance, the feasibility of these intraband transitions is demonstrated at room temperature.


2016 ◽  
Vol 9 (4) ◽  
pp. 1130-1143 ◽  
Author(s):  
Ruili Wang ◽  
Yuequn Shang ◽  
Pongsakorn Kanjanaboos ◽  
Wenjia Zhou ◽  
Zhijun Ning ◽  
...  

Colloidal quantum dots (CQDs) are fast-improving materials for next-generation solution-processed optoelectronic devices such as solar cells, photocatalysis, light emitting diodes, and photodetectors.


2019 ◽  
Vol 7 (46) ◽  
pp. 14441-14453 ◽  
Author(s):  
Aobo Ren ◽  
Liming Yuan ◽  
Hao Xu ◽  
Jiang Wu ◽  
Zhiming Wang

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.


2020 ◽  
Vol 109 ◽  
pp. 110251
Author(s):  
Huu Tuan Nguyen ◽  
Raja Das ◽  
Anh Tuan Duong ◽  
Soonil Lee

2018 ◽  
Vol 47 (15) ◽  
pp. 5866-5890 ◽  
Author(s):  
Yufeng Zhou ◽  
Haiguang Zhao ◽  
Dongling Ma ◽  
Federico Rosei

This review summarizes the recent progress, challenges and perspectives of luminescent solar concentrators based on colloidal quantum dots via harnessing their properties.


2014 ◽  
Vol 2 (25) ◽  
pp. 4974-4979 ◽  
Author(s):  
Wan Ki Bae ◽  
Jaehoon Lim ◽  
Matthias Zorn ◽  
Jeonghun Kwak ◽  
Young-Shin Park ◽  
...  

Hybridization of colloidal quantum-dots and conducting polymers improves the efficiency roll-off of quantum-dot light-emitting diodes.


2019 ◽  
Vol 28 (2) ◽  
pp. 020701 ◽  
Author(s):  
Jinming Hu ◽  
Yuansheng Shi ◽  
Zhenheng Zhang ◽  
Ruonan Zhi ◽  
Shengyi Yang ◽  
...  

2021 ◽  
Author(s):  
Samaneh Aynehband ◽  
Maryam Mohammadi ◽  
Rana Poushimin ◽  
Jean-Michel Nunzi ◽  
A. Simchi

The high mobility of charge carriers in graphene (G) combined with the ease of processing and tunable optical properties of colloidal quantum dots (CQD) have provided high-performance hybrids for the...


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