64-4: Manufacturing and Encapsulation Process of Bottom Gate Bottom Contact Thin-Film Transistors with a Printed Oxide Semiconductor

2018 ◽  
Vol 49 (1) ◽  
pp. 850-853
Author(s):  
Nesrine Kammoun ◽  
Yvonne Krieg ◽  
Guy Williams Ngaleu ◽  
Ralf Anselmann ◽  
Gerhard Renner ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Bottom Contact ◽  
Encapsulation Process ◽  
Bottom Gate

scholarly journals Molecular doping effect in bottom-gate, bottom-contact pentacene thin-film transistors

2011 ◽  
Vol 110 (5) ◽  
pp. 054505 ◽  
Author(s):  
Yusuke Wakatsuki ◽  
Kei Noda ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Kazumi Matsushige
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Doping Effect ◽  
Bottom Contact ◽  
Molecular Doping ◽  
Bottom Gate

Current Enhancement with Contact-Area-Limited Doping for Bottom-Gate, Bottom-Contact Organic Thin-Film Transistors

2013 ◽  
Vol 52 (2R) ◽  
pp. 021602 ◽  
Author(s):  
Kei Noda ◽  
Yusuke Wakatsuki ◽  
Yuji Yamagishi ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Area ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bottom Contact ◽  
Bottom Gate

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

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