P-18: Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors Capped with Molybdenum-Doped ZnO Ultraviolet-Shield Layers

2017 ◽  
Vol 48 (1) ◽  
pp. 1291-1294 ◽  
Author(s):  
Haiting Xie ◽  
Jianeng Xu ◽  
Lei Zhang ◽  
Guochao Liu ◽  
Yan Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nitrogen Doped ◽  
Doped Zno ◽  
Amorphous Ingazno

P-14: Transient Response Properties of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

2018 ◽  
Vol 49 (1) ◽  
pp. 1231-1234
Author(s):  
Chengyuan Dong ◽  
Xianyu Tong ◽  
Haiting Xie ◽  
Lei Zhang ◽  
Guochao Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Transient Response ◽  
Thin Film Transistors ◽  
Response Properties ◽  
Nitrogen Doped ◽  
Amorphous Ingazno

scholarly journals Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors

2018 ◽  
Vol 11 ◽  
pp. 1080-1086 ◽  
Author(s):  
Haiting Xie ◽  
Yan Zhou ◽  
Ying Zhang ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Chemical Bonds ◽  
Nitrogen Doped ◽  
Amorphous Ingazno

Development and analysis of nitrogen-doped amorphous InGaZnO thin film transistors

2017 ◽  
Vol 64 ◽  
pp. 1-5 ◽  
Author(s):  
Haiting Xie ◽  
Jianeng Xu ◽  
Guochao Liu ◽  
Lei Zhang ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nitrogen Doped ◽  
Amorphous Ingazno

Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors

2021 ◽  
Vol 118 (12) ◽  
pp. 123504
Author(s):  
Ablat Abliz ◽  
Xiongxiong Xue ◽  
Xingqiang Liu ◽  
Guoli Li ◽  
Liming Tang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Rational Design ◽  
Doped Zno ◽  
Co Doped

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

2013 ◽  
Vol 52 (9R) ◽  
pp. 090205 ◽  
Author(s):  
Runze Zhan ◽  
Chengyuan Dong ◽  
Bo-Ru Yang ◽  
Han-Ping D. Shieh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Amorphous Ingazno

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno
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