Imaging thin and thick sections of biological tissue with the secondary electron detector in a field-emission scanning electron microscope

Scanning ◽  
2006 ◽  
Vol 19 (6) ◽  
pp. 387-395 ◽  
Author(s):  
William P. Wergin ◽  
Robert W. Yaklich ◽  
Stéphane Roym ◽  
David C. Joy ◽  
Eric F. Erbe ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Biological Tissue ◽  
Secondary Electron ◽  
Electron Detector ◽  
Scanning Electron

Novel and Advanced Applications of the Low Vacuum and Environmental Scanning Electron Microscope (SEM)

1997 ◽  
Vol 3 (S2) ◽  
pp. 385-386 ◽  
Author(s):  
Brendan J. Griffin
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Electron Gun ◽  
Environmental Scanning ◽  
Electron Detector ◽  
Environmental Sem ◽  
Practical Sense ◽  
Advanced Applications ◽  
Scanning Electron

The environmental SEM is an extremely adaptive instrument, allowing a range of materials to be examined under a wide variety of conditions. The limitations of the instrument lie mainly with the restrictions imposed by the need to maintain a moderate vacuum around the electron gun. The primary effect of this has been, in a practical sense, the limited low magnification available. Recently this has been overcome by modifications to the final pressure limiting aperture and secondary electron detector (Fig.l). The modifications are simple and users should be brave in this regard.A variety of electron detectors now exist including various secondary, backscattered and cathodoluminescence systems (Figs 2-5). These provide an excellent range of options; the ESEM must be regarded as a conventional SEM in that a range of imaging options should be installed. In some cases, e.g. cathodoluminescence, the lack of coating provides an advantage unique to the low vacuum SEMs.

Recent Advances in Gaseous Detection Modes in the ESEM

1999 ◽  
Vol 5 (S2) ◽  
pp. 268-269
Author(s):  
T. A. Hardt ◽  
W. R. Knowles
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Large Field ◽  
Environmental Scanning ◽  
Electron Detector ◽  
Field Detection ◽  
Gaseous Environment ◽  
Detection Mode ◽  
Scanning Electron

The Environmental Scanning Electron Microscope, or ESEM, is the only class of SEM that can image in a gaseous environment that will maintain a sample in a fully wet state. The use of the patented Gaseous Secondary Electron Detector, or GSED, which amplifies the secondary electron signal with the gas, has allowed the ESEM to image a multitude of samples with true secondary contrast. Recently, several new modes of imaging in a gas have been developed and will allow further expansion of the capabilities of the ESEM.To maintain pressures in the ESEM up to 20 Torr (27 mbar), the use of multiple, differentially pumped apertures, is required. This can place a restriction on the low magnification range. In the large field detection mode, all magnification restrictions are removed. Magnifications as low as lOx may be achieved. This is similar to many conventional SEMs.

A Field Emission Scanning Electron Microscope Operating in the Secondary Electron Imaging Mode

1972 ◽  
Vol 30 ◽  
pp. 434-435
Author(s):  
T. Komoda ◽  
S. Saito ◽  
Y. Kakinuma ◽  
A. Okura
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Secondary Electron ◽  
Electron Gun ◽  
Emission Current ◽  
Electron Imaging Mode ◽  
Imaging Mode ◽  
Electron Imaging ◽  
Scanning Electron

The authors have built a surface scanning electron microscope incorporating a field emission electron gun. The gun has a brightness almost three order of magnitude higher than that of the ordinary thermionic electron gun, which is promissing high resolution in the secondary electron imaging mode.Emission current fluctuation, which is one of the most serious problems in field emission guns, depends on the vacuum condition around the field emission tip. In order to provide a good vacuum environment, the gun assembly in this microscope is located in the center of an ion-pump system which is symmetrically laid out relative to the electron optical axis. Two tips are mounted on a turret holder and they are exchangeable from the outside without disturbing the vacuum in the gun chamber. A stable emission current of the order of 10μA is obtainable at the normal vacuum operation better than 5x10-10 Torr.

Field Emission SEM Equipped With Noise Compensator

1973 ◽  
Vol 31 ◽  
pp. 302-303
Author(s):  
S. Saito ◽  
H. Todokoro ◽  
S. Nomura ◽  
T. Komoda
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Low Contrast ◽  
Probe Current ◽  
High Resolution Images ◽  
Scanning Electron

Field emission scanning electron microscope (FESEM) features extremely high resolution images, and offers many valuable information. But, for a specimen which gives low contrast images, lateral stripes appear in images. These stripes are resulted from signal fluctuations caused by probe current noises. In order to obtain good images without stripes, the fluctuations should be less than 1%, especially for low contrast images. For this purpose, the authors realized a noise compensator, and applied this to the FESEM.Fig. 1 shows an outline of FESEM equipped with a noise compensator. Two apertures are provided gust under the field emission gun.

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

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