Nanostructures in silicon investigated by atomic force microscopy and surface photovoltage spectroscopy

Scanning ◽  
2008 ◽  
Vol 30 (4) ◽  
pp. 358-363
Author(s):  
A. Cavallini ◽  
D. Cavalcoli
1994 ◽  
Vol 23 (10) ◽  
pp. 1975-1978
Author(s):  
Lei Jiang ◽  
Larry Akio Nagahara ◽  
Kazuhito Hashimoto ◽  
Akira Fujishima

2016 ◽  
Vol 5 (4) ◽  
Author(s):  
Zeno Schumacher ◽  
Yoichi Miyahara ◽  
Andreas Spielhofer ◽  
Peter Grutter

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Nima E. Gorji ◽  
Ugo Reggiani ◽  
Leonardo Sandrolini

The band gap, grain size, and topography of a Cu(In,Ga)Se2(CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. From the steep increase in SPV signal the band gap of the CIGSe absorber, In2S3and ZnO layers are extracted and found to be 1.1, 1.3 and 2.6 eV, respectively. Already below the band gap of ZnO layer, a slight SPV response at 1.40 eV photon energies is observed indicating the presence of deep donor states. The root mean square (rms) of the surface roughness is found to be 37.8 nm from AFM surface topography maps. The grain sizes are almost uniform and smaller than 1 μm.


2000 ◽  
Vol 10 (1-2) ◽  
pp. 15
Author(s):  
Eugene Sprague ◽  
Julio C. Palmaz ◽  
Cristina Simon ◽  
Aaron Watson

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