Design and study of an atmospheric pressure ion funnel by computer simulations

2015 ◽  
Vol 29 (11) ◽  
pp. 1055-1061 ◽  
Author(s):  
Quan Yu ◽  
Zhaoliang Diao ◽  
Kai Ni ◽  
Xiang Qian ◽  
Fei Tang ◽  
...  
Keyword(s):  
Computer Simulations ◽  
Atmospheric Pressure ◽  
Ion Funnel

A Multicapillary Inlet Jet Disruption Electrodynamic Ion Funnel Interface for Improved Sensitivity Using Atmospheric Pressure Ion Sources

2001 ◽  
Vol 73 (17) ◽  
pp. 4162-4170 ◽  
Author(s):  
Taeman Kim ◽  
Keqi Tang ◽  
Harold R. Udseth ◽  
Richard D. Smith
Keyword(s):  
Atmospheric Pressure ◽  
Ion Sources ◽  
Ion Funnel

scholarly journals Термодинамические свойства жидкого цезия: поиск аномалий

2022 ◽  
Vol 92 (1) ◽  
pp. 68
Author(s):  
Л.Р. Фокин ◽  
Е.Ю. Кулямина
Keyword(s):  
Phase Transition ◽  
Computer Simulations ◽  
Order Phase Transition ◽  
Atmospheric Pressure ◽  
Second Order ◽  
Temperature Range ◽  
Liquid Cesium ◽  
Experimental Works ◽  
Second Order Phase Transition

The polymorphism of liquid cesium at atmospheric pressure in the temperature range of ~ 590 K in the form of a second-order phase transition, announced in the late 90s, is not confirmed in new experimental works and in computer simulations of its properties. At the same time, the question whether the change in the properties of liquid cesium with a decrease or increase in density up to two times is monotonous or is accompanied by various anomalies needs further research.

Portable linear ion trap mass spectrometer with compact multistage vacuum system and continuous atmospheric pressure interface

The Analyst ◽  
2019 ◽  
Vol 144 (17) ◽  
pp. 5127-5135 ◽  
Author(s):  
Xiaoxu Li ◽  
Yingjun Zhang ◽  
Saijin Ge ◽  
Jie Qian ◽  
Wei Miao
Keyword(s):  
Mass Spectrometer ◽  
Atmospheric Pressure ◽  
Ion Trap ◽  
Vacuum System ◽  
Linear Ion Trap ◽  
Ion Trap Mass Spectrometer ◽  
System A ◽  
Ion Funnel

A portable linear ion trap mass spectrometer featuring a compact three-stage vacuum system, a continuous atmospheric pressure interface (CAPI), and a miniature ion funnel was developed and characterized.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

A High-Voltage Terminal for a Field-Emission Gun

1972 ◽  
Vol 30 ◽  
pp. 428-429
Author(s):  
N. F. Ziegler
Keyword(s):  
Field Emission ◽  
High Voltage ◽  
Atmospheric Pressure ◽  
Power Supplies ◽  
High Coherence

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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