Point defects in covalent semiconductors: A molecular cluster model

2009 ◽  
Vol 16 (S13) ◽  
pp. 349-361
Author(s):  
A. Fazzio ◽  
M. J. Caldas ◽  
J. R. Leite
2003 ◽  
Vol 125 (4) ◽  
pp. 687-692 ◽  
Author(s):  
Jung-Yeop Lee ◽  
Hong-Chul Park ◽  
Jung-Yeul Jung ◽  
Ho-Young Kwak

Nucleation temperatures on micro line heaters were measured precisely by obtaining the I-R (current-resistance) characteristic curves of the heaters. The bubble nucleation temperature on the heater with 3 μm width is higher than the superheat limit, while the temperature on the heater with broader width of 5 μm is considerably less than the superheat limit. The nucleation temperatures were also estimated by using the molecular cluster model for bubble nucleation on the cavity free surface with effect of contact angle. The bubble nucleation process was observed by microscope/35 mm camera unit with a flash light of μs duration.


2020 ◽  
Vol 22 (32) ◽  
pp. 17922-17931 ◽  
Author(s):  
Yuriy V. Lomachuk ◽  
Daniil A. Maltsev ◽  
Nikolai S. Mosyagin ◽  
Leonid V. Skripnikov ◽  
Roman V. Bogdanov ◽  
...  

The cluster model of xenotime YPO4 is provided to determine the properties of thorium and uranium ion impurity in the crystal.


1985 ◽  
Vol 46 ◽  
Author(s):  
Jose R. Leite ◽  
Jose L.A. Alves

AbstractThe electronic structures of substitutional and tetrahedral-site interstitial Hg+, Auo and Pt− isoelectronic impurities in silicon have been analysed. The centers are theoretically described by the Watson-sphereterminated molecular cluster model within the framework of the multiplescattering Xa formalism. At the substitutional sites the centers are related to the “vacancy” model recently proposed to describe the properties of the elements at the end of the transition-metal series. At the interstitialsites the impurities introduce a hyperdeep s-like level close to the bottom of the valence band and, in agreement with experiments, do not show shallow donor activities. For all the analysed centers the d-states remain fully occupied below, or within, the valence band.


1989 ◽  
Vol 1 (6) ◽  
pp. 587-591 ◽  
Author(s):  
Maurizio Casarin ◽  
Andrea Vittadini ◽  
David Ajo ◽  
Gaetano Granozzi ◽  
Eugenio Tondello

2002 ◽  
Vol 89 (4) ◽  
pp. 349-370 ◽  
Author(s):  
E. K. Shidlovskaya

1994 ◽  
Vol 348 ◽  
Author(s):  
Gu Mu ◽  
Chen Lingyan ◽  
Li Qing ◽  
Wang Liming ◽  
Xiang Kaihua

ABSTRACTThe electronic structures of pure BaF2 crystal and lanthanum doped BaF2 crystal have been calculated in a self-consistent molecular-cluster model. The cluster is embedded in the crystal lattice and the entire system treatediteratively in the Hartree-Fock-Slater local-density theory. As lanthanum doped BaF2 is concerned, the obtained results revealed that the F1–i which is introduced by the lanthanum may contribute to the suppression ofthe slow component in the scintillation light of BaF2 crystal.


2001 ◽  
Author(s):  
Jung-Yeop Lee ◽  
Hong-Chul Park ◽  
Ho-Young Kwak ◽  
Jin-Seok Jeon

Abstract Nucleation temperatures on the micro line heaters were measured precisely by obtaining the I-R (current-resistance) characteristic curves of the heaters. The bubble nucleation temperatures on the heater with 3 μm width are higher than the superheat limit, while the temperature on the heater with broader width of 5 μm are considerably less than the superheat limit. The nucleation temperatures were also estimated by using the molecular cluster model of bubble nucleation with effect of contact angle. The bubble nucleation process was observed by microscope / 35 mm camera unit with a flash light of μs duration.


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