Improved embedded molecular cluster model

2002 ◽  
Vol 89 (4) ◽  
pp. 349-370 ◽  
Author(s):  
E. K. Shidlovskaya
Keyword(s):  
Cluster Model ◽  
Molecular Cluster

Bubble Nucleation on Micro Line Heaters

2003 ◽  
Vol 125 (4) ◽  
pp. 687-692 ◽  
Author(s):  
Jung-Yeop Lee ◽  
Hong-Chul Park ◽  
Jung-Yeul Jung ◽  
Ho-Young Kwak
Keyword(s):  
Contact Angle ◽  
Free Surface ◽  
Cluster Model ◽  
Bubble Nucleation ◽  
Nucleation Temperature ◽  
Molecular Cluster ◽  
Resistance Characteristic ◽  
Nucleation Process ◽  
Superheat Limit ◽  
Current Resistance

Nucleation temperatures on micro line heaters were measured precisely by obtaining the I-R (current-resistance) characteristic curves of the heaters. The bubble nucleation temperature on the heater with 3 μm width is higher than the superheat limit, while the temperature on the heater with broader width of 5 μm is considerably less than the superheat limit. The nucleation temperatures were also estimated by using the molecular cluster model for bubble nucleation on the cavity free surface with effect of contact angle. The bubble nucleation process was observed by microscope/35 mm camera unit with a flash light of μs duration.

Electronic Structure of Mercury, Gold and Platinum Impurities in Silicon

1985 ◽  
Vol 46 ◽  
Author(s):  
Jose R. Leite ◽  
Jose L.A. Alves
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Valence Band ◽  
Electronic Structures ◽  
Cluster Model ◽  
Tetrahedral Site ◽  
Shallow Donor ◽  
Molecular Cluster ◽  
Vacancy Model ◽  
Isoelectronic Impurities

AbstractThe electronic structures of substitutional and tetrahedral-site interstitial Hg+, Auo and Pt− isoelectronic impurities in silicon have been analysed. The centers are theoretically described by the Watson-sphereterminated molecular cluster model within the framework of the multiplescattering Xa formalism. At the substitutional sites the centers are related to the “vacancy” model recently proposed to describe the properties of the elements at the end of the transition-metal series. At the interstitialsites the impurities introduce a hyperdeep s-like level close to the bottom of the valence band and, in agreement with experiments, do not show shallow donor activities. For all the analysed centers the d-states remain fully occupied below, or within, the valence band.

Molecular cluster model of the electronic structure of substitutional impurities in gallium arsenide

1989 ◽  
Vol 1 (6) ◽  
pp. 587-591 ◽  
Author(s):  
Maurizio Casarin ◽  
Andrea Vittadini ◽  
David Ajo ◽  
Gaetano Granozzi ◽  
Eugenio Tondello
Keyword(s):  
Gallium Arsenide ◽  
Electronic Structure ◽  
Cluster Model ◽  
Molecular Cluster ◽  
Substitutional Impurities

Point defects in covalent semiconductors: A molecular cluster model

2009 ◽  
Vol 16 (S13) ◽  
pp. 349-361
Author(s):  
A. Fazzio ◽  
M. J. Caldas ◽  
J. R. Leite
Keyword(s):  
Point Defects ◽  
Cluster Model ◽  
Molecular Cluster

The Mechanism of Slow Component Suppression in Lanthanum Doped Barium Fluoride Crystal

1994 ◽  
Vol 348 ◽  
Author(s):  
Gu Mu ◽  
Chen Lingyan ◽  
Li Qing ◽  
Wang Liming ◽  
Xiang Kaihua
Keyword(s):  
Electronic Structures ◽  
Cluster Model ◽  
Local Density ◽  
Slow Component ◽  
Barium Fluoride ◽  
Molecular Cluster ◽  
Entire System ◽  
Scintillation Light ◽  
Hartree Fock ◽  
Self Consistent

ABSTRACTThe electronic structures of pure BaF2 crystal and lanthanum doped BaF2 crystal have been calculated in a self-consistent molecular-cluster model. The cluster is embedded in the crystal lattice and the entire system treatediteratively in the Hartree-Fock-Slater local-density theory. As lanthanum doped BaF2 is concerned, the obtained results revealed that the F1–i which is introduced by the lanthanum may contribute to the suppression ofthe slow component in the scintillation light of BaF2 crystal.

Bubble Nucleation on Micro Line Heaters

2001 ◽  
Author(s):  
Jung-Yeop Lee ◽  
Hong-Chul Park ◽  
Ho-Young Kwak ◽  
Jin-Seok Jeon
Keyword(s):  
Contact Angle ◽  
Cluster Model ◽  
Bubble Nucleation ◽  
Molecular Cluster ◽  
Resistance Characteristic ◽  
Nucleation Process ◽  
Characteristic Curves ◽  
Superheat Limit ◽  
Current Resistance

Abstract Nucleation temperatures on the micro line heaters were measured precisely by obtaining the I-R (current-resistance) characteristic curves of the heaters. The bubble nucleation temperatures on the heater with 3 μm width are higher than the superheat limit, while the temperature on the heater with broader width of 5 μm are considerably less than the superheat limit. The nucleation temperatures were also estimated by using the molecular cluster model of bubble nucleation with effect of contact angle. The bubble nucleation process was observed by microscope / 35 mm camera unit with a flash light of μs duration.

Molecular cluster model of covalent semiconductors

1978 ◽  
Vol 11 (5) ◽  
pp. L175-L177 ◽  
Author(s):  
A Fazzio ◽  
J R Leite ◽  
A C Pavao ◽  
M L De Siqueira
Keyword(s):  
Cluster Model ◽  
Molecular Cluster
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