Theoretical exploration of global minima, magnetism, structural stability and growth pattern of holmium‐doped silicon HoSi n 0 /− ( n  = 10–18) nanoclusters

2021 ◽  
Author(s):  
Xueyan Dong ◽  
Jucai Yang ◽  
Mazhar Amjad Gilani
Keyword(s):  
Structural Stability ◽  
Growth Pattern ◽  
Global Minima ◽  
Doped Silicon

scholarly journals Structural growth pattern of neutral and negatively charged yttrium-doped silicon clusters YSin0/− (n=6–20): from linked to encapsulated structures

RSC Advances ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 2731-2739 ◽  
Author(s):  
Yuming Liu ◽  
Jucai Yang ◽  
Suying Li ◽  
Lin Cheng
Keyword(s):  
Thermodynamic Stability ◽  
Growth Pattern ◽  
Building Block ◽  
Chemical Reactivity ◽  
Silicon Clusters ◽  
Doped Silicon ◽  
Structural Growth ◽  
Encapsulated Structures

Superatom YSi20−, with an ideal thermodynamic stability and chemical reactivity, is the most suitable building block for novel optical, optoelectronic photosensitive or catalytic nanomaterials.

Time-resolved high-resolution electron microscopy of structural stability in mgo clusters

1996 ◽  
Vol 54 ◽  
pp. 672-673
Author(s):  
T. Kizuka ◽  
N. Tanaka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Magnesium Oxide ◽  
Structural Stability ◽  
High Resolution Electron Microscopy ◽  
Video Tape ◽  
Solid State Physics ◽  
Time Resolved ◽  
Resolution Electron ◽  
Structural And Functional Properties

Structure and stability of atomic clusters have been studied by time-resolved high-resolution electron microscopy (TRHREM). Typical examples are observations of structural fluctuation in gold (Au) clusters supported on silicon oxide films, graphtized carbon films and magnesium oxide (MgO) films. All the observations have been performed on the clusters consisted of single metal element. Structural stability of ceramics clusters, such as metal-oxide, metal-nitride and metal-carbide clusters, has not been observed by TRHREM although the clusters show anomalous structural and functional properties concerning to solid state physics and materials science.In the present study, the behavior of ceramic, magnesium oxide (MgO) clusters is for the first time observed by TRHREM at 1/60 s time resolution and at atomic resolution down to 0.2 nm.MgO and gold were subsequently deposited on sodium chloride (001) substrates. The specimens, single crystalline MgO films on which Au particles were dispersed were separated in distilled water and observed by using a 200-kV high-resolution electron microscope (JEOL, JEM2010) equipped with a high sensitive TV camera and a video tape recorder system.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

STACKING FAULTS, TWINS, AND THE STRUCTURAL STABILITY OF VAN DER WAALS SOLIDS

1974 ◽  
Vol 35 (C7) ◽  
pp. C7-113-C7-119 ◽  
Author(s):  
J. A. VENABLES ◽  
C. A. ENGLISH ◽  
K. F. NIEBEL ◽  
G. J. TATLOCK
Keyword(s):  
Structural Stability ◽  
Van Der Waals ◽  
Stacking Faults
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