Best molecular multiple quantum bit for the diatomic molecular quantum computer using potassium nitride and calcium nitride through vibrational progression

2014 ◽  
Vol 114 (21) ◽  
pp. 1486-1494 ◽  
Author(s):  
Keisaku Ishii
Keyword(s):  
Quantum Computer ◽  
Multiple Quantum ◽  
Quantum Bit ◽  
Vibrational Progression

scholarly journals Quantum Guarded-Command Language (qGCL) for Maximum Value

d'CARTESIAN ◽  
2017 ◽  
Vol 6 (1) ◽  
pp. 8
Author(s):  
Aisya Putri ◽  
Jullia Titaley ◽  
Benny Pinontoan
Keyword(s):  
Quantum Computer ◽  
Command Language ◽  
Quantum Bit ◽  
Maximum Value ◽  
Computer Calculations ◽  
Classical Computer

On a classical computer or a binary computer, calculations are done simultaneously so as to produce the equations and algorithms. The result of this research shows that to determined maximum value specified in the algorithm using quantum Guarded-Command Language (qGCl) in quantum computer. Initially determine of maximum value was construct in Djikstra’s Guarded-Command Language (GCL) which is then implemented on Zuliani’s probability Guarded-Command Language (pGCL) furthermore applying to quantum Guarded-Command Language (qGCL) for last result. Of concern here is the speed in resolving a problem or calculate problem. Due to the Quantum Computer has a Quantum Bit (qubit) and a phenomenon commonly called superposition. Keywords: GCL, pGCL, qGCL, quantum computer.

Challenges in Surface Science for a P-in-Si Quantum Computer — Phosphine Adsorption/Incorporation and Epitaxial Si Encapsulation

2003 ◽  
Vol 10 (02n03) ◽  
pp. 415-423 ◽  
Author(s):  
Lars Oberbeck ◽  
Neil J. Curson ◽  
Steven R. Schofield ◽  
Toby Hallam ◽  
Michelle Y. Simmons ◽  
...  
Keyword(s):  
Low Temperature ◽  
Surface Science ◽  
Defect Density ◽  
Quantum Computer ◽  
Scanning Tunneling ◽  
Epitaxial Silicon ◽  
Tunneling Microscopy ◽  
Phosphorus Segregation ◽  
Quantum Bit ◽  
Quantum Bits

We present three important results relating to the fabrication of a quantum computer in silicon: (i) the interaction of the dopant gas phosphine with Si(001), (ii) a comparison of the morphology of epitaxial Si layers grown on clean and on monohydride-terminated Si(001), and (iii) a direct measure of the segregation/diffusion of incorporated P atoms during Si epitaxial growth and annealing. After low phosphine (PH3) dosing of a Si(001) surface dual bias scanning tunneling microscopy was used to identify the PH x(x = 2, 3) species on the surface. Subsequent annealing to 350°C resulted in the P atom from the PH x molecule being incorporated into the surface to form Si–P heterodimers. The threefold coordination that results from incorporation is expected to be advantageous for phosphorus quantum bit fabrication since it will reduce P segregation and diffusion during Si epitaxial overgrowth. One question to be addressed in the encapsulation process for quantum bits is whether the H resist layer needs to be removed or whether we can grow through the hydrogen layer. We demonstrate that five-monolayer-thick epitaxial Si layers deposited at low temperature (250°C) using molecular beam epitaxy have a significantly lower roughness and defect density when grown on a clean Si(001) surface compared to a H-terminated surface. Attempts to encapsulate phosphorus quantum bits at 260°C and to recover the surface quality of the epitaxial layer resulted in P atoms segregating and diffusing to the surface. These results suggest that the hydrogen layer is desorbed first before the P atoms are encapsulated in epitaxial silicon grown at very low temperature (below 250°C) to minimise phosphorus segregation.

scholarly journals Simulation of Multiple-Quantum NMR Dynamics of Spin Dimer on Quantum Computer

2021 ◽  
Author(s):  
S. I. Doronin ◽  
E. B. Fel’dman ◽  
E. I. Kuznetsova ◽  
A. I. Zenchuk
Keyword(s):  
Quantum Computer ◽  
Multiple Quantum ◽  
Spin Dimer ◽  
Multiple Quantum Nmr

Nonlocal implementation of multi-qubit controlled unitary quantum gates with quantum channel

2021 ◽  
Author(s):  
Engin Şahin ◽  
İhsan Yilmaz
Keyword(s):  
Quantum Channel ◽  
Hybrid Methods ◽  
Quantum Computer ◽  
Communication Channels ◽  
Quantum Measurements ◽  
Quantum Gates ◽  
Quantum Computers ◽  
Multiple Quantum ◽  
Classical Communication ◽  
Target State

Quantum computers are very efficient in terms of speed and security. Decoherence and architectural complexity restrict the control of sensitive quantum information as the number of qubits in a quantum computer increases. Therefore, it is more convenient to make a device with multiple quantum processors with small number of qubits instead of making a device with a large number of qubits quantum processors. The implementation of controlled unitary gates is a problem in such nonlocal systems. The methods in the literature for this problem use entangled qubit pairs, classical communication channels and classical bits. The existing methods perform some unitary operations on the target state for reconstruction after sending information through classical communication channels and applying quantum measurements on control states. In this study, a generalized method for nonlocal implementation of multi-qubit controlled unitary quantum gates with quantum channel is proposed. The proposed method can implement any controlled gate on the control and target qubits that are far from each other in terms of location. The method does not require classical channels and classical bits, any extra unitary operation for reconstruction. The proposed method is both more secure and uses less resources for operations than the other hybrid methods in the literature. Comparisons with existing studies are given in terms of required entangled qubit pairs, classical channels and bits, extra unitary operations for reconstruction the target state, and the advantages of the proposed method are revealed.

scholarly journals Experimental implementation of Hogg’s algorithm on a three-quantum-bit NMR quantum computer

2002 ◽  
Vol 65 (4) ◽  
Author(s):  
Xinhua Peng ◽  
Xiwen Zhu ◽  
Ximing Fang ◽  
Mang Feng ◽  
Maili Liu ◽  
...  
Keyword(s):  
Quantum Computer ◽  
Quantum Bit ◽  
Experimental Implementation

scholarly journals Quantum Computers for Next Generation

2020 ◽  
pp. 452-459
Author(s):  
Prof. Nagaraj Telkar ◽  
Pavankumar Naik ◽  
Akash Mabali ◽  
Girish S H ◽  
Gurusiddeshwar S H ◽  
...  
Keyword(s):  
High Efficiency ◽  
Quantum Computer ◽  
Quantum Algorithms ◽  
Cluster State ◽  
Research Area ◽  
Quantum Computers ◽  
Quantum Bit ◽  
Large Numbers ◽  
Quantum Arithmetic ◽  
New Research

Computers reduce human effort and also focus on increasing the performance to push the technology forward. Many approaches have been devised to increase the performance of the computers. One such way is to reduce the size of the transistors used in the systems. Another very significant tactic is to use quantum computers. It proved to be very effective when used to factor large numbers. It was found that it could decrypt codes in 20 minutes which took billions of years with classical computers. This was a great motivation for focusing on this topic. A quantum computer allows a `quantum bit' or qubit to have three states - 0, 1, and 0 or 1. The last state is the coherent state. This enables an operation to be performed on two diverse values at the same time. However, this brings out a problem of decoherence. It becomes difficult to perform the computation using quantum computers. A quantum computer is desired to have five capabilities - scalable system, initialized state, long decoherence time, universal set of quantum gates, high efficiency measurements. Architecture of the quantum computer is the new research area. It is affected by quantum arithmetic, error management, and cluster-state computing. Without it, the quantum algorithms would not prove to be as efficient. To fully utilize the power of a quantum computer, the algorithms used should be based on quantum parallelism.

Characterisation of multilayer materials using a position-sensitive atom probe

1990 ◽  
Vol 48 (4) ◽  
pp. 624-625
Author(s):  
RAD Mackenzie ◽  
G D W Smith ◽  
A. Cerezo ◽  
J A Liddle ◽  
CRM Grovenor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spatial Information ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Organic Chemical ◽  
Growth Stages ◽  
Multiple Quantum ◽  
Quartz Wool ◽  
Position Sensitive

The position sensitive atom probe (POSAP), described briefly elsewhere in these proceedings, permits both chemical and spatial information in three dimensions to be recorded from a small volume of material. This technique is particularly applicable to situations where there are fine scale variations in composition present in the material under investigation. We report the application of the POSAP to the characterisation of semiconductor multiple quantum wells and metallic multilayers.The application of devices prepared from quantum well materials depends on the ability to accurately control both the quantum well composition and the quality of the interfaces between the well and barrier layers. A series of metal organic chemical vapour deposition (MOCVD) grown GaInAs-InP quantum wells were examined after being prepared under three different growth conditions. These samples were observed using the POSAP in order to study both the composition of the wells and the interface morphology. The first set of wells examined were prepared in a conventional reactor to which a quartz wool baffle had been added to promote gas intermixing. The effect of this was to hold a volume of gas within the chamber between growth stages, leading to a structure where the wells had a composition of GalnAsP lattice matched to the InP barriers, and where the interfaces were very indistinct. A POSAP image showing a well in this sample is shown in figure 1. The second set of wells were grown in the same reactor but with the quartz wool baffle removed. This set of wells were much better defined, as can be seen in figure 2, and the wells were much closer to the intended composition, but still with measurable levels of phosphorus. The final set of wells examined were prepared in a reactor where the design had the effect of minimizing the recirculating volume of gas. In this case there was again further improvement in the well quality. It also appears that the left hand side of the well in figure 2 is more abrupt than the right hand side, indicating that the switchover at this interface from barrier to well growth is more abrupt than the switchover at the other interface.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole
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