High speed in spin-torque-based magnetic memory using magnetic nanocontacts

2013 ◽  
Vol 7 (5) ◽  
pp. 332-335 ◽  
Author(s):  
R. Sbiaa ◽  
S. N. Piramanayagam ◽  
T. Liew
Keyword(s):  
High Speed ◽  
Magnetic Memory ◽  
Spin Torque

High-speed Magnetic Memory based on Spin-Torque Domain Wall Motion

2009 ◽  
Author(s):  
N. Ishiwata ◽  
S. Fukami ◽  
T. Suzuki ◽  
K. Nagahara ◽  
N. Ohshima ◽  
...  
Keyword(s):  
Domain Wall ◽  
High Speed ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Magnetic Memory ◽  
Spin Torque

scholarly journals Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jodi M. Iwata-Harms ◽  
Guenole Jan ◽  
Santiago Serrano-Guisan ◽  
Luc Thomas ◽  
Huanlong Liu ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
High Speed ◽  
Random Access ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Transfer Torque ◽  
Tunnel Barrier ◽  
Magnetic Memory ◽  
Material System ◽  
Highly Efficient ◽  
Memory Applications

AbstractPerpendicular magnetic anisotropy (PMA) ferromagnetic CoFeB with dual MgO interfaces is an attractive material system for realizing magnetic memory applications that require highly efficient, high speed current-induced magnetic switching. Using this structure, a sub-nanometer CoFeB layer has the potential to simultaneously exhibit efficient, high speed switching in accordance with the conservation of spin angular momentum, and high thermal stability owing to the enhanced interfacial PMA that arises from the two CoFeB-MgO interfaces. However, the difficulty in attaining PMA in ultrathin CoFeB layers has imposed the use of thicker CoFeB layers which are incompatible with high speed requirements. In this work, we succeeded in depositing a functional CoFeB layer as thin as five monolayers between two MgO interfaces using magnetron sputtering. Remarkably, the insertion of Mg within the CoFeB gave rise to an ultrathin CoFeB layer with large anisotropy, high saturation magnetization, and good annealing stability to temperatures upwards of 400 °C. When combined with a low resistance-area product MgO tunnel barrier, ultrathin CoFeB magnetic tunnel junctions (MTJs) demonstrate switching voltages below 500 mV at speeds as fast as 1 ns in 30 nm devices, thus opening a new realm of high speed and highly efficient nonvolatile memory applications.

scholarly journals Magnified Damping Under Rashba Spin–Orbit Coupling

SPIN ◽  
2016 ◽  
Vol 06 (01) ◽  
pp. 1650002
Author(s):  
Seng Ghee Tan ◽  
Mansoor B. A. Jalil
Keyword(s):  
Orbit Coupling ◽  
Magnetic Memory ◽  
Spin Torque ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Local Magnetization ◽  
First Order ◽  
Damping Effect ◽  
Rashba Spin ◽  
Spin Torques

The spin–orbit coupling spin torque consists of the field-like [S. G. Tan et al., arXiv:0705.3502 (2007).] and the damping-like terms [H. Kurebayashi et al., Nat. Nanotechnol. 9, 211 (2014).] that have been widely studied for applications in magnetic memory. We focus, in this paper, not on the spin–orbit effect producing the above spin torques, but on its magnifying the damping constant of all field-like spin torques. As first-order precession leads to second-order damping, the Rashba constant is naturally co-opted, producing a magnified field-like damping effect. The Landau–Liftshitz–Gilbert equations are written separately for the local magnetization and the itinerant spin, allowing the progression of magnetization to be self-consistently locked to the spin.

scholarly journals Spin-Torque Sensors for Energy Efficient High-Speed Long Interconnects

2016 ◽  
Vol 63 (2) ◽  
pp. 800-808 ◽  
Author(s):  
Zubair Al Azim ◽  
Abhronil Sengupta ◽  
Syed Shakib Sarwar ◽  
Kaushik Roy
Keyword(s):  
Energy Efficient ◽  
High Speed ◽  
Spin Torque
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