scholarly journals Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy

2016 ◽  
Vol 13 (5-6) ◽  
pp. 252-255
Author(s):  
Aniela Dunn ◽  
Ben F. Spencer ◽  
Samantha J. O. Hardman ◽  
Darren M. Graham ◽  
Simon Hammersley ◽  
...  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


1996 ◽  
Vol 68 (23) ◽  
pp. 3221-3223 ◽  
Author(s):  
Noritaka Usami ◽  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Ryoichi Ito ◽  
Kentaro Onabe ◽  
...  

1996 ◽  
Vol 68 (2-4) ◽  
pp. 129-135
Author(s):  
B. Bonello ◽  
S. Cioncolini ◽  
F. Bogani ◽  
J-P. André

2010 ◽  
Vol 96 (1) ◽  
pp. 011901 ◽  
Author(s):  
M. Syperek ◽  
P. Leszczyński ◽  
J. Misiewicz ◽  
E. M. Pavelescu ◽  
C. Gilfert ◽  
...  

1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  

1992 ◽  
Vol 262 (1-2) ◽  
pp. L65-L69 ◽  
Author(s):  
P. Rolland ◽  
R. Ferreira ◽  
N. Roy ◽  
Ph. Roussignol ◽  
A. Vinattieri ◽  
...  

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