Structural studies of Al thin layer on misoriented GaAs(100) substrate by transmission electron microscopy

2015 ◽  
Vol 12 (8) ◽  
pp. 1148-1151 ◽  
Author(s):  
M. V. Lovygin ◽  
N. I. Borgardt ◽  
I. P. Kazakov ◽  
M. Seibt
1986 ◽  
Vol 21 (2) ◽  
pp. 583-590 ◽  
Author(s):  
Pierre Strobel ◽  
Jean-Claude Joubert ◽  
Maria-Jesus Rodriguez

1986 ◽  
Vol 64 (4) ◽  
pp. 822-833 ◽  
Author(s):  
Y. R. Herd ◽  
E. G. Cutter ◽  
I. Watanabe

The development of megasporocarps of Azolla microphylla, after the retention of a single functional megaspore within the megasporangium, was studied by light and transmission electron microscopy, using material grown under controlled conditions. The young megaspore contained a thin layer of cytoplasm with various organelles and was bounded by a thin exine. It was surrounded by a dense periplasmodial tapetum, which consisted of a peripheral vacuolate region, containing degenerated megaspores, a middle region containing nuclei and large organelles such as amyloplasts and mitochondria, and an inner zone, invaginated round the spore, comprising microtubules, ribosomes, and coated vesicles. At a later stage the exine increased in thickness, and greater vacuolation occurred at the periphery of the periplasmodium. The endoperine was formed by deposition of granular material between the exine and the periplasmodium, and further granular material deposited in small vacuoles gave rise to the exoperine. The floats were formed from three (tapetal) membrane-bounded chambers, in which granular material gradually became organised to form the pseudocells. Characteristic exoperinal filaments were formed in channels in the periplasmodium, which was eventually completely used up in the formation of floats, collar, and megaspore wall, in which sporopollenin was probably present. The megaspore itself became engorged with cytoplasm and storage products such as lipid and starch. Cells of Anabaena with relatively thick walls were present between the megasporangial wall and the indusium.


Author(s):  
G. Gordon Shaw

The usefulness of the disk technique for T.E.M. is extended by increasing the number of cavities in each disk. This result can be achieved, without sacrificing transmission area in each cavity, by the following means: A simple tool, as shown in Fig. 1, is made by drilling four 40-mil holes in a piece of 160-mil drill rod, and soldering in four 40-mil pieces of drill rod.The disks are prepared from bulk material, 20 to 40 mils thick, by spark machining with a tubular brass tool to yield a disk approximately 160 mils in diameter. A disk is cemented to a brass block with a very thin layer of Duco cement. The block with mounted disk is placed on the platform of a spark machine and the tool shown in Fig. 1 is allowed to penetrate by spark erosion (using the fine cut) until 15 mils of metal remains between the face of the tool and the side of the disk mounted on the block. Fifteen mils is allowed for electropolishing to insure the removal of damage produced by spark erosion.


TANSO ◽  
1996 ◽  
Vol 1996 (175) ◽  
pp. 279-285
Author(s):  
Tetsuya Isshiki ◽  
Fujio Okino ◽  
Yoshiyuki Hattori ◽  
Shinji Kawasaki ◽  
Hidekazu Touhara

1985 ◽  
Vol 45 ◽  
Author(s):  
E. Morita ◽  
J. Kasahara ◽  
M. Arai ◽  
S. Kawado

ABSTRACTMicrodefects in Cr-doped SI LEC (001) GaAs wafers which were implanted with Zn+ or As /Zn and capless-annealed in an As ambient have been studied by means of transmission electron microscopy. Most of the microdefects in Zn +- implanted GaAs specimens were identified as precipitates and stacking fault tetrahedra (SFTs). Every SFT was accompanied by a precipitate at the apex. Most of the precipitates were distributed from Rp to Rp + 2∆Rp. Two types (α and β) of SFTs were differentiated by the arrangement of atoms in the core of the stair-rod partial dislocations bounding the periphery of the SFTs in a polar Frystal. β-SFTs were, however, predominantly formed in Zn+ implanted GaAs specimens. Dual implantation of As+ and Zn+ suppressed the formation of SFTs, but not that of precipitates. The formation of SFTs was found to be influenced by the deviation in stoichiometry.


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