Tem Structural Studies on Zn+ Implanted and As+ /Zn+ Dually Implanted GaAs

1985 ◽  
Vol 45 ◽  
Author(s):  
E. Morita ◽  
J. Kasahara ◽  
M. Arai ◽  
S. Kawado

ABSTRACTMicrodefects in Cr-doped SI LEC (001) GaAs wafers which were implanted with Zn+ or As /Zn and capless-annealed in an As ambient have been studied by means of transmission electron microscopy. Most of the microdefects in Zn +- implanted GaAs specimens were identified as precipitates and stacking fault tetrahedra (SFTs). Every SFT was accompanied by a precipitate at the apex. Most of the precipitates were distributed from Rp to Rp + 2∆Rp. Two types (α and β) of SFTs were differentiated by the arrangement of atoms in the core of the stair-rod partial dislocations bounding the periphery of the SFTs in a polar Frystal. β-SFTs were, however, predominantly formed in Zn+ implanted GaAs specimens. Dual implantation of As+ and Zn+ suppressed the formation of SFTs, but not that of precipitates. The formation of SFTs was found to be influenced by the deviation in stoichiometry.

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.


1986 ◽  
Vol 82 ◽  
Author(s):  
P. Ehrhart ◽  
W. Jäger ◽  
W. Schilling ◽  
F. Dworschak ◽  
Afaf A. Gadalla ◽  
...  

ABSTRACTThe evolution of the defect structure in 3 MeV-proton irradiated Cu and Ni has been investigated by transmission electron microscopy and by differential dilatometry. The proton irradiations were performed at T≦100°C up to irradiation doses of 2 dpa. An efficient loss of selfinterstitial atoms at dislocations and a consequently high average concentration of vacancies in clusters is observed starting from rather low fluences. In addition an ordering of the defects in the form of periodic {001} walls with a typical periodicity length of ≈ 60 nm is observed for all equivalent {001} planes. The walls consist of high local concentrations of dislocations, dislocation loops and stacking-fault tetrahedra. The observed formation of periodic arraysof defect walls is considered as an example for a possibly general microstructural phenomenon in metals under irradiation.


Author(s):  
A. W. Ruff ◽  
L. K. Ives

Recently we have reported the stacking fault energy in a series of hcp silver-tin alloys as a function of composition. The stacking fault energy was found to increase linearly with composition from 5.5 erg/cm2 for an 11.9 at.% tin alloy to 18.9 erg/cm2 for a 17.2 at.% tin alloy. Measurements were made on extended dislocation nodes and double-ribbons observed in thin foils by means of transmission electron microscopy. During the course of this investigation a number of dislocation configurations were observed as the result of interactions between extended dislocations lying on adjacent basal planes. Many of these configurations were identical to those which have been extensively studied by Delavignette and Amelinckx in hexagonal graphite. The same basal plane faulting pattern is found there as in the hcp structure. We have observed other configurations in these alloys that could be associated with cross-slip of basal dislocations or with their interactions with non-basal dislocations. It is the purpose of this paper to discuss faulting in the hcp structure and to describe several of the dislocation configurations observed in these silver-tin alloys.


1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.


2019 ◽  
Vol 7 (5) ◽  
pp. 1280-1291 ◽  
Author(s):  
Alaka Panda ◽  
R. Govindaraj ◽  
R. Mythili ◽  
G. Amarendra

Bismuth and iron oxides subjected to ball milling followed by controlled annealing treatments showed the formation of core–shell nanostructures with Bi2Fe4O9 as the core and a shell of BiFeO3 and Bi25FeO40 phases as deduced based on the analysis of transmission electron microscopy results.


2016 ◽  
Vol 672 ◽  
pp. 103-112 ◽  
Author(s):  
Elena Macías-Sánchez ◽  
Antonio G. Checa ◽  
Marc G. Willinger

The surface membrane is a lamellar structure exclusive of gastropods that is formed during the shell secretion. It protects the surface of the growing nacre and it is located between the mantle epithelium and the mineralization compartment. At the mantle side of the surface membrane numerous vesicles provide material, and at the nacre side, the interlamellar membranes detach from the whole structure. Components of nacre (glycoproteins, polysaccharides and calcium carbonate) cross the structure to reach the mineralization compartment, but the mechanism by which this occurs is still unknown. In this paper we have investigated the ultrastructure of the surface membrane and the associated vesicle layer by means of Transmission Electron Microscopy. Electron Energy Loss Spectroscopy and Energy-dispersive X-ray Spectroscopy were used for elemental analysis. The analyses revealed the concentration of calcium in the studied structures: vesicles, surface membrane, and interlamellar membranes. We discuss the possible linkage of calcium to the organic matrix.


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