Spin relaxation length in quantum dot spin LEDs

2013 ◽  
Vol 10 (9) ◽  
pp. 1214-1217 ◽  
Author(s):  
Henning Höpfner ◽  
Carola Fritsche ◽  
Arne Ludwig ◽  
Astrid Ludwig ◽  
Frank Stromberg ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spin Relaxation ◽  
Relaxation Length

scholarly journals Fundamental limits of electron and nuclear spin qubit lifetimes in an isolated self-assembled quantum dot

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
George Gillard ◽  
Ian M. Griffiths ◽  
Gautham Ragunathan ◽  
Ata Ulhaq ◽  
Callum McEwan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spin Relaxation ◽  
Nuclear Spin ◽  
Operating Conditions ◽  
External Control ◽  
Spin Qubits ◽  
Fundamental Limits ◽  
Trade Offs ◽  
Wide Range ◽  
Spin Qubit

AbstractCombining external control with long spin lifetime and coherence is a key challenge for solid state spin qubits. Tunnel coupling with electron Fermi reservoir provides robust charge state control in semiconductor quantum dots, but results in undesired relaxation of electron and nuclear spins through mechanisms that lack complete understanding. Here, we unravel the contributions of tunnelling-assisted and phonon-assisted spin relaxation mechanisms by systematically adjusting the tunnelling coupling in a wide range, including the limit of an isolated quantum dot. These experiments reveal fundamental limits and trade-offs of quantum dot spin dynamics: while reduced tunnelling can be used to achieve electron spin qubit lifetimes exceeding 1 s, the optical spin initialisation fidelity is reduced below 80%, limited by Auger recombination. Comprehensive understanding of electron-nuclear spin relaxation attained here provides a roadmap for design of the optimal operating conditions in quantum dot spin qubits.

scholarly journals MONTE CARLO SIMULATION OF SPIN RELAXATION IN NANOWIRES AND 2-D CHANNELS OF II–VI SEMICONDUCTORS

SPIN ◽  
2012 ◽  
Vol 02 (02) ◽  
pp. 1250007 ◽  
Author(s):  
ASHUTOSH SHARMA ◽  
SWETALI NIMJE ◽  
AKSHAYKUMAR SALIMATH ◽  
BAHNIMAN GHOSH
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
External Field ◽  
Spin Relaxation ◽  
Simulation Method ◽  
Relaxation Length ◽  
Factors Affecting ◽  
Spin Dephasing ◽  
Spin Polarized ◽  
The Many

We have analyzed spin relaxation behavior of various II–VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semiclassical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakonov–Perel mechanism and Elliot–Yafet mechanism are dominant for spin relaxation in II–VI semiconductors. Variation in spin relaxation length with external field has been analyzed and comparison is drawn between nanowire and 2-D channels. Spin relaxation lengths of various II–VI semiconductors are compared at an external field of 1 kV/cm to understand the predominant factors affecting spin dephasing in them. Among the many results obtained, most noticeable one is that spin relaxation length in nanowires is many times greater than that in 2-D channel.

Room temperature spin relaxation length in spin light-emitting diodes

2011 ◽  
Vol 99 (5) ◽  
pp. 051102 ◽  
Author(s):  
Henning Soldat ◽  
Mingyuan Li ◽  
Nils C. Gerhardt ◽  
Martin R. Hofmann ◽  
Arne Ludwig ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Relaxation Length ◽  
Light Emitting

Asymmetry effect on the spin relaxation in quantum dot structures

2009 ◽  
Vol 6 (4) ◽  
pp. 833-836
Author(s):  
A. F. Zinovieva ◽  
A. V. Dvurechenskii ◽  
N. P. Stepina ◽  
A. S. Deryabin ◽  
A. I. Nikiforov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spin Relaxation ◽  
Asymmetry Effect
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