Preparation and characterization of high-k aluminium nitride (AlN) thin film for sensor and integrated circuits applications

2012 ◽  
Vol 9 (6) ◽  
pp. 1454-1457 ◽  
Author(s):  
J. F. Souza ◽  
M. A. Moreira ◽  
I. Doi ◽  
J. A. Diniz ◽  
P. J. Tatsch ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Aluminium Nitride ◽  
High K

Materials and Physical Properties of Novel High-k and Medium-k Gate Dielectrics

2001 ◽  
Vol 670 ◽  
Author(s):  
Ran Liu ◽  
Stefan Zollner ◽  
Peter Fejes ◽  
Rich Gregory ◽  
Shifeng Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal Oxides ◽  
Gate Dielectrics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Compositional Properties ◽  
Sharp Interfaces ◽  
Selection Of

ABSTRACTRapid shrinking in device dimensions calls for replacement of SiO2 by new gate insulators in future generations of MOSFETs. Among many desirable properties, potential candidates must have a higher dielectric constant, low leakage current, and thermal stability against reaction or diffusion to ensure sharp interfaces with both the substrate Si and the gate metal (or poly-Si). Extensive characterization of such materials in thin-film form is crucial not only for selection of the alternative gate dielectrics and processes, but also for development of appropriate metrology of the high-k films on Si. This paper will report recent results on structural and compositional properties of thin film SrTiO3 and transition metal oxides (ZrO2and HfO2).

Characterization of aluminium nitride thin film structure using second-harmonic generation

1994 ◽  
Vol 3 (1) ◽  
pp. 41-45 ◽  
Author(s):  
D. Blanc ◽  
A. Cachard ◽  
J.C. Pommier ◽  
J.F. Roux ◽  
J.L. Coutaz
Keyword(s):  
Thin Film ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Film Structure ◽  
Aluminium Nitride ◽  
Thin Film Structure

NOISE REDUCTION IN TERAHERTZ THIN FILM MEASUREMENTS USING A DOUBLE MODULATED DIFFERENTIAL TECHNIQUE

2002 ◽  
Vol 02 (01) ◽  
pp. R13-R28 ◽  
Author(s):  
SAMUEL P. MICKAN ◽  
DEREK ABBOTT ◽  
JESPER MUNCH ◽  
X.-C. ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuits ◽  
Noise Reduction ◽  
Time Domain ◽  
Noise Levels ◽  
Differential Technique ◽  
Thin Film Characterization ◽  
Double Modulation

Differential terahertz (THz) time-domain spectroscopy (TDS) is a technique for decreasing noise levels in THz thin film characterization experiments. Characterizing thin films in the GHz to THz range is critical for the development of fast integrated circuits and photonic systems, and is potentially applicable to biosensors and proteomics. This paper shows how the differential technique, combined with double modulation, enables the study of thin films with noise reduction over normal TDS that improves at the film gets thinner. Double modulated differential THz-TDS has enabled the characterization of films with less than 1-μm thickness.

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Microstructural and fractographic characterization of B4C-Al cermets tested under dynamic and static loading

1989 ◽  
Vol 47 ◽  
pp. 562-563
Author(s):  
Gyeung Ho Kim ◽  
Mehmet Sarikaya ◽  
D. L. Milius ◽  
I. A. Aksay
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Static Loading ◽  
Carbon Deposition ◽  
Full Density ◽  
Unique Combination ◽  
Strong Component ◽  
Reaction Products

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.

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