Simple way of fabrication of Epoxy Novolak Resin optical waveguides on silicon substrate

2011 ◽  
Vol 8 (9) ◽  
pp. 2942-2945
Author(s):  
Vaclav Prajzler ◽  
Oleksiy Lyutakov ◽  
Ivan Huttel ◽  
Jiri Barna ◽  
Jarmila Spirkova ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Optical Waveguides

scholarly journals Fabrication of Polyimide Optical Waveguide on Silicon Dioxide Layer Stacked Silicon Substrate

2017 ◽  
Vol 17 (2) ◽  
pp. 36
Author(s):  
Dadin Mahmudin ◽  
Shobih ◽  
Pamungkas Daud ◽  
Yusuf Nur Wijayanto
Keyword(s):  
Silicon Dioxide ◽  
Optical Fibers ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Ultra Violet ◽  
Long Distance ◽  
Distance Communication ◽  
Paper Fabrication ◽  
Insertion Losses ◽  
Planar Optical Waveguides

Optical waveguides are important for guiding lightwave from a place to other places. Propagation and insertion losses of the optical waveguides should be considered to be in low values. Recently, optical waveguides with circular structures, which are optical fibers, are used widely for guiding lightwave in long-distance optical communication with very low propagation and insertion losses. Simultaneously, optical waveguides with planar structure are also developed for short distance communication in optical devices. We have reported design and analysis of the planar optical waveguides. In this paper, fabrication of planar optical waveguides using a polyimide material on thin silicon dioxide combined with the silicon substrate is reported. The polyimide material is used for the core of the optical waveguides. The silicon dioxide located on the silicon substrate and the air is used for cladding of the optical waveguides. Fabrication of the optical waveguides such as oxidation, photoresist coating, masking, ultra-violet exposure, and etching was done. The fabricated optical waveguides were characterized physically using a standard microscope and scanning electron microscope (SEM). The fabrication processes and characterization results are reported and discussed in detail.

Photoinduced refractive-index changes in TiO2-doped silica optical waveguides on silicon substrate

1991 ◽  
Vol 27 (24) ◽  
pp. 2294 ◽  
Author(s):  
Y. Hibino ◽  
M. Abe ◽  
T. Kominato ◽  
Y. Ohmori
Keyword(s):  
Refractive Index ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Index Changes

Low‐loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy

1990 ◽  
Vol 56 (9) ◽  
pp. 802-804 ◽  
Author(s):  
Y. S. Kim ◽  
S. S. Lee ◽  
R. V. Ramaswamy ◽  
S. Sakai ◽  
Y. C. Kao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Molecular Beam ◽  
Phase Modulator ◽  
Low Loss

scholarly journals Enhancement of piezoelectric properties of lithium niobate thin films by different annealing parameters

2020 ◽  
Vol 6 (2) ◽  
pp. 47-52
Author(s):  
Roman N. Zhukov ◽  
K.S. Kushnerev ◽  
Dmitry A. Kiselev ◽  
Tatiana S. Ilina ◽  
Ilya V. Kubasov ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Piezoelectric Materials ◽  
Random Access ◽  
Piezoelectric Phase ◽  
Electro Optic ◽  
Wide Range ◽  
Probe Microscope ◽  
Ferroelectric Random Access Memories

Piezoelectric materials with useful properties find a wide range of applications including opto- and acousto- electronics. Lithium niobate in the form of a thin film is one of those promising materials and has a potential to improve ferroelectric random access memories devices, optical waveguides or acoustic delay lines by virtue of its physical characteristics, e.g. electro-optic coefficient, acoustic velocity, refractive indices etc. The key challenge to overcome is lithium nonstoichiometry as it leads to the appearance of parasite phases and thus aggravates physical and structural properties of a film. According to literature data, in order to obtain microcrystalline piezoelectric phase in previously amorphous films a set of methods is used. In our case we tried to synthesize LN films using congruent target and non-heated silicon substrate and then attain the piezoelectric phase by different annealing parameters. Afterwards LN films were compared to the ones synthesized on the silicon substrate with an additional buffer layer of platinum. Samples were studied by scanning probe microscope. Self-polarization vectors were defined. Based on domain structure images, the histograms of distribution of piezoresponse signals were built.

TEM characterization of proton-exchanged LiNbO3 optical waveguides

1986 ◽  
Vol 44 ◽  
pp. 480-481
Author(s):  
W. E. Lee
Keyword(s):  
Refractive Index ◽  
Benzoic Acid ◽  
Optical Waveguides ◽  
Total Internal Reflection ◽  
Index Of Refraction ◽  
Optical Measurements ◽  
Lithium Ions ◽  
Wide Channel ◽  
Tem Characterization

An optical waveguide consists of a several-micron wide channel with a slightly different index of refraction than the host substrate; light can be trapped in the channel by total internal reflection.Optical waveguides can be formed from single-crystal LiNbO3 using the proton exhange technique. In this technique, polished specimens are masked with polycrystal1ine chromium in such a way as to leave 3-13 μm wide channels. These are held in benzoic acid at 249°C for 5 minutes allowing protons to exchange for lithium ions within the channels causing an increase in the refractive index of the channel and creating the waveguide. Unfortunately, optical measurements often reveal a loss in waveguiding ability up to several weeks after exchange.

Intrinsic mode theory of tapered optical waveguides

1985 ◽  
Vol 132 (6) ◽  
pp. 314 ◽  
Author(s):  
J.M. Arnold ◽  
A. Belghoraf ◽  
A. Dendane
Keyword(s):  
Optical Waveguides ◽  
Mode Theory

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Transport Properties Of Metallic Nanowires On Silicon Substrate

2014 ◽  
Vol 2 (1) ◽  
pp. 20-23
Author(s):  
Jaskiran Kaur ◽  
◽  
Surinder Singh ◽  
Keyword(s):  
Transport Properties ◽  
Silicon Substrate ◽  
Metallic Nanowires

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

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