Dopant activation and damage evolution in implanted silicon after excimer laser annealing

2010 ◽  
Vol 8 (3) ◽  
pp. 940-943 ◽  
Author(s):  
G. Fisicaro ◽  
M. Italia ◽  
V. Privitera ◽  
G. Piccitto ◽  
K. Huet ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Damage Evolution ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser

scholarly journals Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

2013 ◽  
Vol 113 (20) ◽  
pp. 204902 ◽  
Author(s):  
G. V. Luong ◽  
S. Wirths ◽  
S. Stefanov ◽  
B. Holländer ◽  
J. Schubert ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Strained Sige

Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions

2002 ◽  
Vol 717 ◽  
Author(s):  
T. Noguchi ◽  
G. Kerrien ◽  
T. Sarnet ◽  
D. Débarre ◽  
J. Boulmer ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Spectroscopic Ellipsometry ◽  
Laser Annealing ◽  
Laser Energy ◽  
Process Analysis ◽  
Single Shot ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
The Difference ◽  
Ultra Shallow Junctions

AbstractSingle-shot Excimer Laser Annealing (ELA) was performed onto Si surface that was previously B+ implanted with or without Ge+ pre-amorphization. As a result, p+ type USJ (Ultra-Shallow Junction) has been formed. In process analysis, using Infrared Spectroscopic Ellipsometry (IR-SE) has been performed and compared with conventional 4-point probe method. Also, the corresponding crystallinity for the USJ of Si surface has been studied using Ultraviolet-Visible (UV-Vis) Spectroscopic Ellipsometry. In the case of pre-amorphization by Ge+ implantation, the laser energy density threshold required for melting the surface, and therefore for electrical activation, decreased drastically because of the difference in the thermodynamic properties of the amorphized Si. Estimation of the junction depth shows a shallower junction when using UV-SE, as compared to IR-SE. This can be explained by the fact that, in the UV range, the crystallinity of the top layer is predominant while IR-SE is more sensitive to dopant activation. This efficient single-shot ELA is a candidate for the USJ formation for sub-0.1 νm CMOS transistors. The effective method for investigating the activation state related to the crystallinity by using UV-SE and IR-SE is expected to apply as a non-contact analytical tool for USJ formation.

scholarly journals Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

2015 ◽  
Vol 26 ◽  
pp. 03008 ◽  
Author(s):  
SitiRahmah Aid ◽  
Azura Hamzah ◽  
Sumiaty Ambran ◽  
Satoru Matsumoto ◽  
Zaharah Johari ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Pulse Number ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Junction Formation

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

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