Ultra thin porous silicon films investigated by X-ray reflectometry

2011 ◽  
Vol 8 (6) ◽  
pp. 1931-1935 ◽  
Author(s):  
Nessima Ennejah ◽  
Selma Aouida ◽  
Brahim Bessais
Keyword(s):  
Porous Silicon ◽  
Silicon Films ◽  
X Ray

scholarly journals INVESTIGATION OF LATTICE DEFORMATION OF POROUS SILICON FILMS BY X-RAY DOUBLE CRYSTAL DIFFRACTION

1993 ◽  
Vol 42 (6) ◽  
pp. 954
Author(s):  
HE XIAN-CHANG ◽  
WU ZI-QIN ◽  
ZHAO TE-XIU ◽  
Lü ZHI-HUI ◽  
WANG XIAO-PING ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Films ◽  
Lattice Deformation ◽  
Double Crystal ◽  
X Ray

scholarly journals Reciprocal Space Analysis of the Microstructure of Luminescent and Nonluminescent Porous Silicon Films

1994 ◽  
Vol 358 ◽  
Author(s):  
S.R. Lee ◽  
J.C. Barbour ◽  
J.W. Medernach ◽  
J.O. Stevenson ◽  
J.S. Custer
Keyword(s):  
Porous Silicon ◽  
Space Structure ◽  
Reciprocal Space ◽  
Silicon Films ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Crystalline Materials ◽  
X Ray ◽  
Space Analysis ◽  
Spatially Correlated

ABSTRACTThe microstructure of anodically prepared porous silicon films was determined using a novel x-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive x-ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p+ porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n+ and p+ porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure.

X-ray photoelectron spectroscopy characterization of stain-etched luminescent porous silicon films

1998 ◽  
Vol 80 (1-4) ◽  
pp. 159-162 ◽  
Author(s):  
R Zanoni ◽  
G Righini ◽  
G Mattogno ◽  
L Schirone ◽  
G Sotgiu ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Photoelectron Spectroscopy ◽  
Silicon Films ◽  
X Ray

Rapid Thermal Oxidation for Passivation of Porous Silicon

1994 ◽  
Vol 342 ◽  
Author(s):  
I. BÁrsony ◽  
J.G.E. Klappe ◽  
É. Vázsonyi ◽  
T. Lohner ◽  
M. Fried
Keyword(s):  
Porous Silicon ◽  
Mechanical Stability ◽  
Porous Substrate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Tetragonal Lattice ◽  
Optical Heating ◽  
Vertical Inhomogeneity ◽  
Highly Porous

ABSTRACTChemical and mechanical stability of porous silicon layers (PSL) is the prerequisite of any active (luminescent) or passive (e.g. porous substrate) integrated applications. In this work X-ray diffraction (XRD) was used to analyze quantitatively the strain distribution obtained in different morphology PSL that were prepared on (100) p and p+Si substrates. Tetragonal lattice constant distortion can be as high as 1.4% in highly porous “as-prepared” samples. Incoherent optical heating RTO is governed by the absorption in the oxidized specimen. PSL show vertical inhomogeneity according to interpretation of spectroscopic ellipsometry (SE) data. Oxygen incorporation during RTO is controlled by specific surface (in p+ proportional, in p inversely proportional with porosity), while the developing compressive stress depends on pore size, and decreases with porosity in both morphologies.

On the morphology of stain-etched porous silicon films

1998 ◽  
Vol 80 (1-4) ◽  
pp. 163-167 ◽  
Author(s):  
L. Schirone ◽  
G. Sotgiu ◽  
M. Montecchi
Keyword(s):  
Porous Silicon ◽  
Silicon Films

Microhardness of porous silicon films and composites

1997 ◽  
Vol 101 (1) ◽  
pp. 33-37 ◽  
Author(s):  
S.P. Duttagupta ◽  
X.L. Chen ◽  
S.A. Jenekhe ◽  
P.M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Silicon Films
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