Low-temperature growth of InGaN/GaN nano-islands investigated by grazing-incidence X-ray diffraction

2009 ◽  
Vol 6 (S2) ◽  
pp. S602-S606 ◽  
Author(s):  
Th. Schmidt ◽  
J. I. Flege ◽  
M. Siebert ◽  
S. Figge ◽  
T. Yamaguchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Temperature Growth ◽  
X Ray ◽  
Low Temperature Growth

Defect Model and Growth Characteristics of Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
M. Fatemi ◽  
B. Tadayon ◽  
H. B. Dietrich ◽  
S. Tadayon
Keyword(s):  
Low Temperature ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Temperature Growth ◽  
X Ray ◽  
Random Behavior ◽  
Antisite Defects ◽  
Low Temperature Gaas ◽  
Lattice Matched

ABSTRACTLow-temperature GaAs layers (LTGaAs) grown by molecular beam epitaxy on GaAs substrates have been characterized by x-ray diffraction techniques. X-ray rocking curve measurements on more than 200 anneal conditions show that through appropriate choice of growth condition, layers with different states of strain are obtained. Three distinct ranges of low temperature growth are defined, labelled as “low-range,” “mid-range,” and “high-range,” corresponding to growth temperatures less than 260 °C, between 260 and 450 °C, and more than 450 °C, respectively. 0.5μm thick films grown in the low-range are amorphous, whereas those in the mid-range are fully strained and lattice-matched to the substrate, and those grown above 450 °C are indistinguishable from ordinary GaAs. Notable properties of mid-range layers are the random behavior of the as-grown strain, and the expansion and contraction of the lattice parameter with thermal anneals up to 900 °C. A growth model for LTGaAs based on arsenic antisite defects is proposed.

Enhancement of the Amorphous to Microcrystalline Phase Transition in Silicon Films Deposited by Sif4-H2-He Plasmas

1998 ◽  
Vol 536 ◽  
Author(s):  
G. Cicalai ◽  
M. Losurdo ◽  
P. Capezzuto ◽  
G. Bruno ◽  
T. Ligonzo ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Electrical Properties ◽  
Low Temperature ◽  
Volume Fraction ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Microcrystalline Silicon ◽  
X Ray ◽  
Plasma Decomposition

AbstractHydrogenated microcrystalline silicon (μc-Si:H) thin films have been obtained by plasma decomposition of SiF4-H2-He mixtures at low temperature (120 °C). The size of crystalline grain and their volume fraction with respect to the amorphous phase have been found dependent on the r.f. power as evaluated by grazing incidence X-ray diffraction, microRaman and ellipsometry measurements. Chemical and electrical properties change according to the microcrystallinity. Pure and/or highly microcrystalline silicon has been obtained at temperature and r.f. power as low as 120 °C and 15 Watt.

New Structure of CTAB Templated Silica Films as revealed by GISAXS coupled to HRTEM

2000 ◽  
Vol 628 ◽  
Author(s):  
Sophie Besson ◽  
Catherine Jacquiod ◽  
Thierry Gacoin ◽  
André Naudon ◽  
Christian Ricolleau ◽  
...  
Keyword(s):  
Cetyltrimethylammonium Bromide ◽  
Grazing Incidence ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Electronic Microscopy ◽  
Silica Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Hexagonal Arrangement ◽  
Spherical Micelles

ABSTRACTA microstructural study on surfactant templated silica films is performed by coupling traditional X-Ray Diffraction (XRD) and Transmission Electronic Microscopy (TEM) to Grazing Incidence Small Angle X-Ray Scattering (GISAXS). By this method it is shown that spin-coating of silicate solutions with cationic surfactant cetyltrimethylammonium bromide (CTAB) as a templating agent provides 3D hexagonal structure (space group P63/mmc) that is no longer compatible with the often described hexagonal arrangement of tubular micelles but rather with an hexagonal arrangement of spherical micelles. The extent of the hexagonal ordering and the texture can be optimized in films by varying the composition of the solution.

Micro X-Ray Diffraction Study of Polycrystalline MgB 2 Wire and Evaluation of Carbon Doping Effect Via Low-Temperature Sintering

2019 ◽  
Author(s):  
Minoru Maeda ◽  
Dipak Patel, Dr. ◽  
Hiroaki Kumakura, Dr. ◽  
Gen Nishijima, Dr. ◽  
Akiyoshi Matsumoto, Dr. ◽  
...  
Keyword(s):  
Low Temperature ◽  
Diffraction Study ◽  
Carbon Doping ◽  
Doping Effect ◽  
Low Temperature Sintering ◽  
X Ray Diffraction ◽  
X Ray

The Application of X-Ray Diffraction at Elevated Temperatures to Study the Mechanism of Formation of Sodium Tripolyphosphate

1961 ◽  
Vol 5 ◽  
pp. 276-284
Author(s):  
E. L. Moore ◽  
J. S. Metcalf
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Amorphous Phase ◽  
Elevated Temperatures ◽  
Sodium Tripolyphosphate ◽  
X Ray Diffraction ◽  
Mechanism Of Formation ◽  
X Ray ◽  
Temperature Form ◽  
High Temperature Form

AbstractHigh-temperature X-ray diffraction techniques were employed to study the condensation reactions which occur when sodium orthophosphates are heated to 380°C. Crystalline Na4P2O7 and an amorphous phase were formed first from an equimolar mixture of Na2HPO4·NaH2PO4 and Na2HPO4 at temperatures above 150°C. Further heating resulted in the formation of Na5P3O10-I (high-temperature form) at the expense of the crystalline Na4P4O7 and amorphous phase. Crystalline Na5P3O10-II (low-temperature form) appears after Na5P3O10-I.Conditions which affect the yield of crystalline Na4P2O7 and amorphous phase as intermediates and their effect on the yield of Na5P3O10 are also presented.

A novel low-temperature growth of uniform CuInS2 thin films and their application in selenization/sulfurization-free CuInS2 solar cells

2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Cuins2 Thin Films
Sign in / Sign up

Export Citation Format

Share Document