In situ grazing incidence x‐ray diffraction system for clusters deposited on a low‐temperature substrate

1996 ◽  
Vol 67 (12) ◽  
pp. 4092-4097 ◽  
Author(s):  
Kenji Koga ◽  
Harutoshi Takeo
1989 ◽  
Vol 211-212 ◽  
pp. 39-47 ◽  
Author(s):  
M. Sauvage-Simkin ◽  
R. Pinchaux ◽  
J. Massies ◽  
P. Claverie ◽  
J. Bonnet ◽  
...  

1989 ◽  
Vol 60 (7) ◽  
pp. 2369-2372 ◽  
Author(s):  
P. Claverie ◽  
J. Massies ◽  
R. Pinchaux ◽  
M. Sauvage‐Simkin ◽  
J. Frouin ◽  
...  

2018 ◽  
Vol 20 (9) ◽  
pp. 6629-6637 ◽  
Author(s):  
Alae El Haitami ◽  
Michel Goldmann ◽  
Philippe Fontaine ◽  
Marie-Claude Fauré ◽  
Sophie Cantin

A first-order phase transition with a peculiar feature is evidenced by means of in situ grazing incidence X-ray diffraction in the 2D organic phase-mediated nucleation of an inorganic layer.


2000 ◽  
Vol 07 (04) ◽  
pp. 437-446 ◽  
Author(s):  
G. RENAUD

The application of X-rays to the structural characterization of surfaces and interfaces, in situ and in UHV, is discussed on selected examples. Grazing incidence X-ray diffraction is not only a very powerful technique for quantitatively investigating the atomic structure of surfaces and interfaces, but is also very useful for providing information on the interfacial registry for coherent interfaces or on the strain deformation, island and grain sizes for incoherent epilayers.


2004 ◽  
Vol 59 (6) ◽  
pp. 635-638 ◽  
Author(s):  
Norbert W. Mitzel ◽  
Udo Losehand

The compounds (H3C)2S, (H3Si)2S and (H3Ge)2S have been crystallised in situ on a diffractometer and their crystal structures determined by low-temperature X-ray diffraction. The molecules are present as monomers in the crystals. The aggregation of the molecules through secondary intermolecular contacts in the crystal is different: (H3C)2S is weakly associated into dimers by S···S contacts, whereas (H3Si)2S and (H3Ge)2S form Si···S and Ge···S contacts in an ice-analogous aggregation motif. Important geometry parameters are (H3C)2S: C-S 1.794(av) Å , C-S-C 99.2(1)°; (H3Si)2S: Si- S 2.143(1) Å , Si-S-Si 98.4°; (H3Ge)2S Ge-S 2.223(2) and 2.230(2) Å , Ge-S-Ge 98.2(1)◦.


2019 ◽  
Vol 123 (21) ◽  
pp. 13253-13262 ◽  
Author(s):  
Michael Scherzer ◽  
Frank Girgsdies ◽  
Eugen Stotz ◽  
Marc-Georg Willinger ◽  
Elias Frei ◽  
...  

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