Ab initio calculation for an initial growth process of GaN on (0001) and (000$ \bar 1 $) surfaces by vapor phase epitaxy

2009 ◽  
Vol 6 (S2) ◽  
pp. S301-S304 ◽  
Author(s):  
Hikari Suzuki ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu
Keyword(s):  
Ab Initio ◽  
Vapor Phase ◽  
Ab Initio Calculation ◽  
Growth Process ◽  
Vapor Phase Epitaxy ◽  
Initial Growth

Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study

2020 ◽  
Vol 20 (7) ◽  
pp. 4358-4365
Author(s):  
Takumi Ohka ◽  
Toru Akiyama ◽  
Abdul Muizz Pradipto ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Ab Initio ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Adsorption Behavior ◽  
Ab Initio Study ◽  
Step Edges

Pole figure measurement of the initial growth of GaN nanoneedles on GaN/Si(111) by using hydride vapor phase epitaxy

2016 ◽  
Vol 69 (5) ◽  
pp. 837-841
Author(s):  
Injun Jeon ◽  
Ha Young Lee ◽  
Ji-Yeon Noh ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Pole Figure ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Initial Growth

A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate

2008 ◽  
Vol 92 (15) ◽  
pp. 152102 ◽  
Author(s):  
B. Galiana ◽  
I. Rey-Stolle ◽  
C. Algora ◽  
K. Volz ◽  
W. Stolz
Keyword(s):  
Vapor Phase ◽  
Growth Process ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

X-RAY MONITORING OF InGaAsP LAYERS GROWN BY VAPOR PHASE EPITAXY

1985 ◽  
Vol 56 ◽  
Author(s):  
A. T. MACRANDER ◽  
K. STREGE
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Initial Growth ◽  
Double Crystal ◽  
X Ray ◽  
Quality Material

AbstractX-ray double crystal diffractometry provides a means of rapidly characterizing epitaxial structures. Because the technique is rapid and nondestructive and because it yields a wealth of information, rocking curves have been routinely obtained and extensively studied by us. We present here selective results illustrating the typical progression in layer quality which occurs from the initial growth in a reactor to the growth of device quality material.

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 622 ◽  
Author(s):  
Shulin Gu ◽  
Rong Zhang ◽  
Ling Zhang ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Initial Growth ◽  
Lateral Growth ◽  
Subsequent Step ◽  
Lateral Growth Rate ◽  
High Supersaturation ◽  
Optimal Material

ABSTRACTThe initial stage of hydride vapor phase epitaxy GaN growth on ZnO-buffered sapphire is reported. A high supersaturation in the growth ambient was used to favor a rapid initial growth on the substrate. A subsequent step with high lateral growth rate was chosen to promote coalescence of the initial islands and provide optimal material properties. The specific mole fractions of the GaCl and NH3 control these vertical and lateral growth rates. The use of a two- step growth process in the GaN growth has led to improved and controlled morphology and high quality GaN materials have then been grown on sapphire substrate with and without ZnO buffer layers.

Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy

1988 ◽  
Vol 53 (12) ◽  
pp. 1101-1103 ◽  
Author(s):  
S. J. Rosner ◽  
Jun Amano ◽  
J. W. Lee ◽  
J. C. C. Fan
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Initial Growth ◽  
Organometallic Vapor Phase Epitaxy
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