Enhanced device performance of GaInN-based deep green light emitting diodes with V-defect-free active region

2009 ◽  
Vol 6 (S2) ◽  
pp. S840-S843 ◽  
Author(s):  
T. Detchprohm ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Wang ◽  
Y. Li ◽  
...  
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Device Performance ◽  
Light Emitting ◽  
Deep Green

Improved performance of GaInN based deep green light emitting diodes through V-defect reduction

2008 ◽  
Vol 5 (6) ◽  
pp. 2207-2209 ◽  
Author(s):  
T. Detchprohm ◽  
M. Zhu ◽  
Y. Xia ◽  
Y. Li ◽  
W. Zhao ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Defect Reduction ◽  
Light Emitting ◽  
Improved Performance ◽  
Deep Green

Modulation of ligand conjugation for efficient FAPbBr3 based green light-emitting diodes

2020 ◽  
Vol 4 (5) ◽  
pp. 1383-1389 ◽  
Author(s):  
Feng Zhang ◽  
Mengna Sun ◽  
Xiyu Luo ◽  
Dongdong Zhang ◽  
Lian Duan
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Device Performance ◽  
Light Emitting ◽  
New Strategy

We put forward a new strategy for efficient PeLEDs by understanding the effect of ligand conjugation on device performance.

scholarly journals Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes

2021 ◽  
Vol 11 (3) ◽  
pp. 926
Author(s):  
Shamsul Amir Abdul Rais ◽  
Zainuriah Hassan ◽  
Ahmad Shuhaimi Abu Bakar ◽  
Mohd Nazri Abd Rahman ◽  
Yusnizam Yusuf ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Wavelength Shift ◽  
Light Emitting ◽  
Deep Green

scholarly journals Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

2017 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu Karpov ◽  
Amit Yadav ◽  
Denis Mamedov ◽  
Vera L. Zerova ◽  
...  
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Emission Spectra ◽  
Light Extraction ◽  
Extended Defects ◽  
Light Emitting ◽  
Industrial Grade ◽  
Wide Range ◽  
Two Peaks

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs.

Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

2020 ◽  
Vol 67 (9) ◽  
pp. 837-842
Author(s):  
Muhammad Usman ◽  
Abdur-Rehman Anwar ◽  
Munaza Munsif ◽  
Shahzeb Malik ◽  
Noor Ul Islam ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Green Light ◽  
Light Emitting

scholarly journals Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

2017 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu Karpov ◽  
Amit Yadav ◽  
Denis Mamedov ◽  
Vera L. Zerova ◽  
...  
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Emission Spectra ◽  
Light Extraction ◽  
Extended Defects ◽  
Light Emitting ◽  
Industrial Grade ◽  
Wide Range ◽  
Two Peaks

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs.

GaN-based deep green light emitting diodes on silicon-on-insulator substrates

2009 ◽  
Vol 6 (S2) ◽  
pp. S822-S825 ◽  
Author(s):  
S. Tripathy ◽  
A. Dadgar ◽  
K. Y. Zang ◽  
V. K. X. Lin ◽  
Y. C. Liu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Silicon On Insulator ◽  
Light Emitting ◽  
Deep Green
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