GaN-based deep green light emitting diodes on silicon-on-insulator substrates

2009 ◽  
Vol 6 (S2) ◽  
pp. S822-S825 ◽  
Author(s):  
S. Tripathy ◽  
A. Dadgar ◽  
K. Y. Zang ◽  
V. K. X. Lin ◽  
Y. C. Liu ◽  
...  
2008 ◽  
Vol 5 (6) ◽  
pp. 2207-2209 ◽  
Author(s):  
T. Detchprohm ◽  
M. Zhu ◽  
Y. Xia ◽  
Y. Li ◽  
W. Zhao ◽  
...  

2009 ◽  
Vol 6 (S2) ◽  
pp. S840-S843 ◽  
Author(s):  
T. Detchprohm ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Wang ◽  
Y. Li ◽  
...  

2021 ◽  
Vol 11 (3) ◽  
pp. 926
Author(s):  
Shamsul Amir Abdul Rais ◽  
Zainuriah Hassan ◽  
Ahmad Shuhaimi Abu Bakar ◽  
Mohd Nazri Abd Rahman ◽  
Yusnizam Yusuf ◽  
...  

Author(s):  
Hyunsik Im ◽  
Atanu Jana ◽  
Vijaya Gopalan Sree ◽  
QIANKAI BA ◽  
Seong Chan Cho ◽  
...  

Lead-free, non-toxic transition metal-based phosphorescent organic–inorganic hybrid (OIH) compounds are promising for next-generation flat-panel displays and solid-state light-emitting devices. In the present study, we fabricate highly efficient phosphorescent green-light-emitting diodes...


1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.


1995 ◽  
Vol 187 (2) ◽  
pp. 467-470 ◽  
Author(s):  
W. C. Harsch ◽  
G. Cantwell ◽  
J. F. Schetzina

2000 ◽  
Vol 180 (1) ◽  
pp. 217-223 ◽  
Author(s):  
M.W. Cho ◽  
J.H. Chang ◽  
H. Wenisch ◽  
H. Makino ◽  
T. Yao

2011 ◽  
Vol 14 (11) ◽  
pp. H460 ◽  
Author(s):  
Surani Bin Dolmanan ◽  
Siew Lang Teo ◽  
Vivian Kaixin Lin ◽  
Hui Kim Hui ◽  
Armin Dadgar ◽  
...  

1992 ◽  
Vol 61 (15) ◽  
pp. 1775-1777 ◽  
Author(s):  
H. Sugawara ◽  
K. Itaya ◽  
H. Nozaki ◽  
G. Hatakoshi

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