Effect of aluminum supply on aluminum-induced crystallization of amorphous silicon at low temperature

2009 ◽  
Vol 6 (3) ◽  
pp. 663-668 ◽  
Author(s):  
Rui Song ◽  
Yulong Liu ◽  
Zexian Cao
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Hydrophobic Surfaces Prepared by Aluminum-Induced Crystallization of Amorphous Silicon

2007 ◽  
Author(s):  
Ying Song ◽  
Rahul Premachandran Nair ◽  
Min Zou
Keyword(s):  
Amorphous Silicon ◽  
Annealing Temperature ◽  
Textured Surfaces ◽  
Surface Wetting ◽  
Water Contact ◽  
Annealing Conditions ◽  
Wetting Property ◽  
Percentage Area ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

This paper reports fabrication and understanding of hydrophobic silicon nano-textured surfaces produced by aluminum-induced crystallization (AIC) of amorphous silicon (a-Si). In this study, the effects of annealing temperature and duration on surface topography and wetting property were investigated. The results showed that surface wetting property directly correlates with the percentage area coverage by the nano-textures, which in turn was determined by the annealing conditions. The largest water contact angle (WCA) obtained from this research is 137°.

The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
Maruf Hossain ◽  
Husam Abu-Safe ◽  
Marwan Barghouti ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Oxide Layer ◽  
Environmental Scanning ◽  
X Ray ◽  
Layer Sequence ◽  
Si Films ◽  
Induced Crystallization ◽  
Al Oxide ◽  
Aluminum Induced Crystallization

ABSTRACTThe effect of substrate temperature and interface oxide layer on aluminum induced crystallization (AIC) of amorphous silicon (a-Si) is investigated. The effect of substrate temperature on the AIC process was studied by changing the deposition temperate of a-Si from 200 to 300°C in a Al/a-Si/glass configuration. To study the effect of interface oxide on AIC, samples with a-Si/Al/glass, a-Si/Al-oxide/Al/glass, and Al/Si-oxide/a-Si/glass configurations were prepared at a fixed substrate temperature. The samples were annealed in the temperature range from 300°C to 525°C for different periods of time. The X-ray diffraction (XRD) patterns confirmed the crystallization of the a-Si films in the various configurations. From the analysis, we report that crystallization of a-Si happen at 350°C annealing temperature in the Al/a-Si/glass configuration. However, with or without the presence of Si-oxide at the interface, crystallization saturated after annealing for 20 minutes at 400°C. On the other hand, when Al-oxide is present at the interface, higher annealing temperatures and longer annealing times are required to saturate the crystallization of a-Si. Environmental Scanning Electron Microscope (ESEM) and Energy Dispersive X-Ray (EDX) mapping were used to study the surface morphology as well as the layer sequence after crystallization. This analysis revealed that Si-Al layer-exchange happens regardless of the deposited film configuration.

CW Argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films

2004 ◽  
Vol 808 ◽  
Author(s):  
Sampath K. Paduru ◽  
Husam H. Abu-safe ◽  
Hameed A. Naseem ◽  
Adnan Al-Shariah ◽  
William D. Brown
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Threshold Power ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Power Densities ◽  
Argon Ion ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

ABSTRACTCW Argon-ion laser initiated aluminum induced crystallization (AIC) of RF magnetron sputtered amorphous silicon (a-Si) thin films has been investigated. It was found that lasers could be effectively used to initiate AIC process at very low threshold power densities. An argon-ion laser (λ=514.5 nm) was used to anneal Al/a-Si/glass structures with varying power densities ranging between 55 and 125 W/cm2 and exposure times ranging from 10 to 120 s. X-ray diffraction analysis showed the resulting films to be polycrystalline. The crystallization rate increased both with power density and exposure time. Environmental scanning electron microscopy (ESEM) analysis showed that the surface features change with increasing power density and irradiation time. A dendritic growth pattern was observed in the initial stages of interaction between the films. A strong crystalline Raman peak at around 520 cm-1 was observed in the Raman spectra of the crystallized samples.

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