Epitaxial silicon thin films by low-temperature aluminum induced crystallization of amorphous silicon for solar cell applications

2006 ◽  
Author(s):  
Khalil Sharif ◽  
Husam Abu-safe ◽  
Hameed Naseem ◽  
William Brown ◽  
Mowafak Al-Jassim ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Epitaxial Silicon ◽  
Silicon Thin Films ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

POLY-SILICON THIN FILMS PREPARED BY LOW TEMPERATURE ALUMINUM-INDUCED CRYSTALLIZATION

2001 ◽  
Vol 15 (17n19) ◽  
pp. 716-721
Author(s):  
YASUHIRO MATSUMOTO ◽  
MASAO TAMURA ◽  
RENE ASOMOZA ◽  
ZHENRUI YU
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Hall Effect Measurements ◽  
High Carrier ◽  
P Type ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

P-type poly-Si thin films prepared by low temperature Aluminum-induced crystallization and doping are reported. The starting material was boron-doped a-Si:H prepared by PECVD on glass substrates. Aluminum layers with different thicknessess were evaporated on a-Si:H surface and conventional thermal annealing was performed at temperatures ranging from 300 to 550°C. XRD, SIMS, TEM and Hall effect measurements were carried out to characterize the annealed films. Results show that a-Si:H contacted with adequate Al could be crystallized at temperature as low as 300°C after annealing for 60 minutes. This material has high carrier concentration as well as high Hall mobility can be used as a p-layer or seed layer for thin film poly-Si solar cells. The technique reported here is compatible with PECVD process.

Experimental study of aluminum-induced crystallization of amorphous silicon thin films

2005 ◽  
Vol 198 (1-3) ◽  
pp. 300-303 ◽  
Author(s):  
G.J. Qi ◽  
S. Zhang ◽  
T.T. Tang ◽  
J.F. Li ◽  
X.W. Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Experimental Study ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Effect of surface morphology on laser-induced crystallization of amorphous silicon thin films

2013 ◽  
Author(s):  
Lu Huang ◽  
Jing Jin ◽  
Guohua Wang ◽  
Weimin Shi ◽  
Weiguang Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Induced Crystallization ◽  
Effect Of Surface
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