Optical characterization of non-stoichiometric silicon nitride films

2008 ◽  
Vol 5 (5) ◽  
pp. 1320-1323 ◽  
Author(s):  
David Necas ◽  
Vratislav Perina ◽  
Daniel Franta ◽  
Ivan Ohlídal ◽  
Josef Zemek
Keyword(s):  
Silicon Nitride ◽  
Optical Characterization ◽  
Silicon Nitride Films

scholarly journals Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects

Coatings ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 416 ◽  
Author(s):  
Jiří Vohánka ◽  
Ivan Ohlídal ◽  
Miloslav Ohlídal ◽  
Štěpán Šustek ◽  
Martin Čermák ◽  
...  
Keyword(s):  
Experimental Data ◽  
Silicon Nitride ◽  
Least Squares Method ◽  
Uniaxial Anisotropy ◽  
Optical Characterization ◽  
Inhomogeneous Layer ◽  
Matrix Formalism ◽  
Random Roughness ◽  
Silicon Nitride Films

The study was devoted to optical characterization of non-stoichiometric silicon nitride films prepared by reactive magnetron sputtering in argon-nitrogen atmosphere onto cold (unheated) substrates. It was found that these films exhibit the combination of three defects: optical inhomogeneity (refractive index profile across the films), uniaxial anisotropy with the optical axis perpendicular to the boundaries and random roughness of the upper boundaries. The influence of the uniaxial anisotropy was included into the corresponding formulae of the optical quantities using the matrix formalism and the approximation of the inhomogeneous layer by a multilayer system consisting of large number thin homogeneous layers. The random roughness was described using the scalar diffraction theory. The processing of the experimental data was performed using the multi-sample modification of the least-squares method, in which experimental data of several samples differing in thickness were processed simultaneously. The dielectric response of the silicon nitride films was modeled using the modification of the universal dispersion model, which takes into account absorption processes corresponding to valence-to-conduction band electron transitions, excitonic effects and Urbach tail. The spectroscopic reflectometric and ellipsometric measurements were supplemented by measuring the uniformity of the samples using imaging spectroscopic reflectometry.

scholarly journals Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films

2019 ◽  
Vol 70 (7) ◽  
pp. 16-26
Author(s):  
Ivan Ohlídal ◽  
Jiří Vohánka ◽  
Daniel Franta ◽  
Martin Čermák ◽  
Jaroslav Ženíšek ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Optical Characterization ◽  
Point Of View ◽  
Approximate Methods ◽  
Multilayer Systems ◽  
Practical Point ◽  
Advantages And Disadvantages ◽  
Silicon Nitride Films

Abstract In this paper the overview of the most important approximate methods for the optical characterization of inhomogeneous thin films is presented. The following approximate methods are introduced: Wentzel–Kramers–Brillouin–Jeffreys approximation, method based on substituting inhomogeneous thin films by multilayer systems, method based on modifying recursive approach and method utilizing multiple-beam interference model. Principles and mathematical formulations of these methods are described. A comparison of these methods is carried out from the practical point of view, ie advantages and disadvantages of individual methods are discussed. Examples of the optical characterization of three inhomogeneous thin films consisting of non-stoichiometric silicon nitride are introduced in order to illustrate efficiency and practical meaning of the presented approximate methods.

Optical characterization of silicon nitride films deposited by ECR-CVD

Vacuum ◽  
1994 ◽  
Vol 45 (10-11) ◽  
pp. 1027-1028 ◽  
Author(s):  
S García ◽  
JM Maŕtin ◽  
I Mártil ◽  
G González-Díaz
Keyword(s):  
Silicon Nitride ◽  
Optical Characterization ◽  
Silicon Nitride Films

Characterization of Chemically Vapor Deposited Silicon Nitride Films from Disilane and Ammonia

1995 ◽  
Vol 34 (Part 2, No. 4A) ◽  
pp. L437-L439 ◽  
Author(s):  
Redhouane Henda ◽  
Larbi Laanab ◽  
EmmanuelScheid ◽  
Robert Fourmeaux
Keyword(s):  
Silicon Nitride ◽  
Silicon Nitride Films ◽  
Chemically Vapor Deposited

Surface Characterization of Silicon Nitride Films Biased in Ionic Water

2000 ◽  
Vol 147 (4) ◽  
pp. 1493
Author(s):  
K. Matsuzaki ◽  
Y. Mikoshiba ◽  
H. Fujiwara
Keyword(s):  
Silicon Nitride ◽  
Surface Characterization ◽  
Silicon Nitride Films

Characterization of silicon nitride films formed in an RF glow discharge

1988 ◽  
Vol 33-34 ◽  
pp. 742-749 ◽  
Author(s):  
Kenji Murakami ◽  
Takayuki Takeuchi ◽  
Kenji Ishikawa ◽  
Tatsuo Yamamoto
Keyword(s):  
Silicon Nitride ◽  
Glow Discharge ◽  
Silicon Nitride Films ◽  
Rf Glow Discharge
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