One-dimensional lucky-drift model with scattering and movement asymmetries for impact ionization in amorphous semiconductors

2008 ◽  
Vol 5 (3) ◽  
pp. 796-799 ◽  
Author(s):  
K. Jandieri ◽  
O. Rubel ◽  
S. D. Baranovskii ◽  
A. Reznik ◽  
J. A. Rowlands ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Amorphous Semiconductors ◽  
One Dimensional ◽  
Drift Model ◽  
Lucky Drift

Lucky-drift model for impact ionization in amorphous semiconductors

2008 ◽  
Vol 20 (S1) ◽  
pp. 221-225 ◽  
Author(s):  
K. Jandieri ◽  
O. Rubel ◽  
S. D. Baranovskii ◽  
A. Reznik ◽  
J. A. Rowlands ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Amorphous Semiconductors ◽  
Drift Model ◽  
Lucky Drift

Lucky drift impact ionization in amorphous semiconductors

2004 ◽  
Vol 96 (4) ◽  
pp. 2037-2048 ◽  
Author(s):  
Safa Kasap ◽  
J. A. Rowlands ◽  
S. D. Baranovskii ◽  
Kenkichi Tanioka
Keyword(s):  
Impact Ionization ◽  
Amorphous Semiconductors ◽  
Lucky Drift

Lucky-drift model for avalanche multiplication in amorphous semiconductors

2004 ◽  
Vol 1 (5) ◽  
pp. 1186-1193 ◽  
Author(s):  
O. Rubel ◽  
S. D. Baranovskii ◽  
I. P. Zvyagin ◽  
P. Thomas ◽  
S. O. Kasap
Keyword(s):  
Amorphous Semiconductors ◽  
Avalanche Multiplication ◽  
Drift Model ◽  
Lucky Drift

Electron lucky-drift impact ionization coefficients of ZnS : Mn

Pramana ◽  
2004 ◽  
Vol 63 (5) ◽  
pp. 1089-1097
Author(s):  
F. M. Abou El-Ela
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients ◽  
Lucky Drift
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