Chemical sensing by simultaneous measurement of photoluminescence intensity and photoluminescence decay time of porous silicon

2007 ◽  
Vol 4 (6) ◽  
pp. 2078-2082 ◽  
Author(s):  
J. Dian ◽  
V. Vrkoslav ◽  
I. Jelínek
Keyword(s):  
Porous Silicon ◽  
Decay Time ◽  
Simultaneous Measurement ◽  
Chemical Sensing ◽  
Photoluminescence Intensity ◽  
Photoluminescence Decay

Localisation of Carriers in Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
I. Mihalcescu ◽  
J. C. Vial ◽  
R. Romestain
Keyword(s):  
Simple Model ◽  
Porous Silicon ◽  
Temperature Variation ◽  
Time Evolution ◽  
Decay Time ◽  
Additional Assumption ◽  
Shape Evolution ◽  
Photoluminescence Intensity ◽  
Photoluminescence Decay ◽  
Strong Localization

AbstractWe analyze the intensity and decay time evolution of the porous silicon luminescence upon anodic oxidation, aging, chemiral thinning and temperature variation. Strong analogies are pointed out for the photoluminescence intensity as well as for the photoluminescence decay shape evolution. They are interpreted by the variation of the extension of the carrier wavefunction induced by the modification of potential barrier efficiencies. No additional assumption such as hopping of carriers was necessary to explain the decay shapes well fitted by stretched exponential. On the contrary our observations and our simple model are in favor of a strong localization of carriers. Some experimental results are revisited within the frame of this model.

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

2006 ◽  
Vol 17 (23) ◽  
pp. 5722-5725 ◽  
Author(s):  
G W Shu ◽  
C K Wang ◽  
J S Wang ◽  
J L Shen ◽  
R S Hsiao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Decay Time ◽  
Inas Quantum Dots ◽  
Photoluminescence Decay ◽  
Self Assembled

Microsecond photoluminescence decay and oxidation of porous silicon

1997 ◽  
Vol 102 (11) ◽  
pp. 813-816 ◽  
Author(s):  
H.Z. Song ◽  
G.G. Qin ◽  
D.C. Yao ◽  
Z.J. Chen ◽  
X.M. Bao
Keyword(s):  
Porous Silicon ◽  
Photoluminescence Decay

scholarly journals Porous Silicon Structural Evolution from In-Situ Luminescence and Raman Measurements

1996 ◽  
Vol 431 ◽  
Author(s):  
D. R. Tallant ◽  
M. J. Kelly ◽  
T. R. Guilinger ◽  
R. L. Simpson
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Structural Evolution ◽  
Surface Oxidation ◽  
Ethanol Solution ◽  
Nonradiative Recombination ◽  
Photoluminescence Intensity ◽  
Exciton Migration ◽  
Photoluminescence Mechanism

AbstractWe performed in-situ photoluminescence and Raman measurements on an anodized silicon surface in the HF/ethanol solution used for anodization. The porous silicon thereby produced, while resident in HF/ethanol, does not immediately exhibit intense photoluminescence. Intense photoluminescence develops spontaneously in HF/ethanol after 18–24 hours or with replacement of the HF/ethanol with water. These results support a quantum confinement mechanism in which exciton migration to traps and nonradiative recombination dominates the de-excitation pathways until silicon nanocrystals are physically separated and energetically decoupled by hydrofluoric acid etching or surface oxidation. The porous silicon surface, as produced by anodization, shows large differences in photoluminescence intensity and peak wavelength over millimeter distances. Parallel Raman measurements implicate nanometer-size silicon particles in the photoluminescence mechanism.

Photoluminescence decay time studies of type‐II GaAs/AlAs quantum well structures

1989 ◽  
Vol 66 (11) ◽  
pp. 5639-5641 ◽  
Author(s):  
M. D. Sturge ◽  
Janet L. Mackay ◽  
Colette Maloney ◽  
J.K. Pribram
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Photoluminescence Decay

Observation of increased photoluminescence decay time in strain‐induced quantum‐well dots

1993 ◽  
Vol 62 (12) ◽  
pp. 1376-1378 ◽  
Author(s):  
I‐Hsing Tan ◽  
Ying‐Lan Chang ◽  
Richard Mirin ◽  
Evelyn Hu ◽  
James Merz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Photoluminescence Decay

Depositing Metals into Porous Silicon - the Impact on Luminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
P. Steiner ◽  
F. Kozlowski ◽  
W. Lang
Keyword(s):  
Porous Silicon ◽  
Porous Layer ◽  
Electron Microprobe ◽  
Uv Light ◽  
Electrochemical Process ◽  
Photoluminescence Intensity ◽  
Spectral Position ◽  
Metal Atoms ◽  
Metal Treatment ◽  
The Impact

ABSTRACTIndium, tin, antimony and aluminum are deposited by an electrochemical process into the pores of n-type porous silicon which is anodized with ultraviolet light applied during formation. The presence of these metal atoms in the porous layer is checked by electron microprobe measurement. As reported previously, UV-light etched material shows red photoluminescence (630 nm) and blue electroluminescence (470 nm) without the metal treatment. After metal deposition the photoluminescence intensity decreases slightly (factor 0.5 - 0.8), whereas the spectral position remains constant. The electroluminescence efficiency is significantly enhanced by indium, aluminum and tin in the pores (factor 5 - 90). The tin and antimony treatment causes a red shift to 580 nm and 740 nm, respectively. The conductivity is slightly increased by all kinds of metals by a factor 2-5.

Sign in / Sign up

Export Citation Format

Share Document