Persistent photoconductivity effect on weak localization in AlxGa1–xAsySb1–y/InAs quantum wells

2007 ◽  
Vol 4 (2) ◽  
pp. 329-331
Author(s):  
S. Ishida ◽  
A. Fujimoto ◽  
K. Takeda ◽  
I. Shibasaki
Keyword(s):  
Quantum Wells ◽  
Weak Localization ◽  
Persistent Photoconductivity

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

Transport and persistent photoconductivity in INP/INGAAS single quantum wells

1986 ◽  
Vol 2 (4) ◽  
pp. 369-372 ◽  
Author(s):  
M.J. Kane ◽  
D.A. Anderson ◽  
L.L. Taylor ◽  
S.J. Bass
Keyword(s):  
Quantum Wells ◽  
Persistent Photoconductivity ◽  
Single Quantum

Negative and positive persistent photoconductivity effects in AlxGa1−xAsySb1−y/InAs quantum wells

2007 ◽  
Vol 301-302 ◽  
pp. 185-189
Author(s):  
S. Ishida ◽  
A. Fujimoto ◽  
K. Oto ◽  
M. Araki ◽  
I. Shibasaki
Keyword(s):  
Quantum Wells ◽  
Persistent Photoconductivity

scholarly journals Persistent photoconductivity in InAsN/InGaAs quantum wells

2008 ◽  
Vol 146 (11-12) ◽  
pp. 510-513 ◽  
Author(s):  
J.C. Fan ◽  
Y.F. Chen
Keyword(s):  
Quantum Wells ◽  
Persistent Photoconductivity

scholarly journals Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

2007 ◽  
Vol 91 (14) ◽  
pp. 142120 ◽  
Author(s):  
S. Dasgupta ◽  
C. Knaak ◽  
J. Moser ◽  
M. Bichler ◽  
S. F. Roth ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
High Mobility ◽  
Persistent Photoconductivity ◽  
Thermally Activated ◽  
Donor Binding Energy

Transport and persistent photoconductivity in InGaAs/InP single quantum wells

1986 ◽  
Vol 49 (20) ◽  
pp. 1360-1362 ◽  
Author(s):  
D. A. Anderson ◽  
S. J. Bass ◽  
M. J. Kane ◽  
L. L. Taylor
Keyword(s):  
Quantum Wells ◽  
Persistent Photoconductivity ◽  
Single Quantum
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