Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy

2006 ◽  
Vol 3 (6) ◽  
pp. 2203-2206 ◽  
Author(s):  
A. Satake ◽  
K. Soejima ◽  
H. Aizawa ◽  
K. Fujiwara
2012 ◽  
Vol 4 (6) ◽  
pp. 2262-2271 ◽  
Author(s):  
Lifang Xu ◽  
D. Patel ◽  
C. S. Menoni ◽  
Jeng-Ya Yeh ◽  
L. J. Mawst ◽  
...  

1996 ◽  
Vol 74 (S1) ◽  
pp. 220-224
Author(s):  
B. Reid ◽  
M. Abou-Khalil ◽  
R. Maciejko

Using a bipolar ensemble Monte Carlo coupled with a Poisson equation solver, we simulate, for the first time, carrier capture with both types of carriers in an InGaAs/InP-doped single quantum well, following femtosecond light-pulse excitation. We show that Coulomb interaction between electrons and holes is very efficient in keeping the capture ambipolar for a long time. However, for short times, the capture is unipolar. Our results indicate that for these kinds of experiments, Monte Carlo simulations with only one type of carrier give questionable results.


2007 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
M. J. Godfrey ◽  
M. J. Kappers ◽  
C. J. Humphreys

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