Valence-band mixing induced bysp-d exchange interaction in CdMnTe quantum wires

2006 ◽  
Vol 3 (3) ◽  
pp. 667-670 ◽  
Author(s):  
Y. Harada ◽  
T. Kita ◽  
O. Wada ◽  
L. Marsal ◽  
H. Mariette ◽  
...  
Keyword(s):  
Exchange Interaction ◽  
Valence Band ◽  
Quantum Wires ◽  
Band Mixing ◽  
Valence Band Mixing

Polarization Anisotropy and Valence Band Mixing in Semiconductor Quantum Wires

1997 ◽  
Vol 78 (8) ◽  
pp. 1580-1583 ◽  
Author(s):  
F. Vouilloz ◽  
D. Y. Oberli ◽  
M.-A. Dupertuis ◽  
A. Gustafsson ◽  
F. Reinhardt ◽  
...  
Keyword(s):  
Valence Band ◽  
Quantum Wires ◽  
Polarization Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

Effect of lateral confinement on valence-band mixing and polarization anisotropy in quantum wires

1998 ◽  
Vol 57 (19) ◽  
pp. 12378-12387 ◽  
Author(s):  
F. Vouilloz ◽  
D. Y. Oberli ◽  
M.-A. Dupertuis ◽  
A. Gustafsson ◽  
F. Reinhardt ◽  
...  
Keyword(s):  
Valence Band ◽  
Quantum Wires ◽  
Polarization Anisotropy ◽  
Lateral Confinement ◽  
Band Mixing ◽  
Valence Band Mixing

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing

2013 ◽  
Vol 52 (12R) ◽  
pp. 125001 ◽  
Author(s):  
Edmund Harbord ◽  
Yasutomo Ota ◽  
Yuichi Igarashi ◽  
Masayuki Shirane ◽  
Naoto Kumagai ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Valence Band ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Band Mixing ◽  
Valence Band Mixing

Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

2008 ◽  
Vol 372 (10) ◽  
pp. 1691-1694 ◽  
Author(s):  
Chun-Nan Chen ◽  
Wei-Long Su ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
Wan-Tsang Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Mixing Effect ◽  
Band Mixing ◽  
Valence Band Mixing
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