Influence of Al content on electrical and structural properties of Si-doped AlxGa1–xN/GaN HEMT structures

2006 ◽  
Vol 3 (3) ◽  
pp. 486-489 ◽  
Author(s):  
Cuimei Wang ◽  
Xiaoliang Wang ◽  
Guoxin Hu ◽  
Junxi Wang ◽  
Jianping Li
Keyword(s):  
Structural Properties ◽  
Al Content ◽  
Gan Hemt ◽  
Si Doped

Impact of strain relaxation of AlGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT

2006 ◽  
Vol 49 (4) ◽  
pp. 393-399 ◽  
Author(s):  
Yan Yang ◽  
Yue Hao ◽  
Jincheng Zhang ◽  
Chong Wang ◽  
Qian Feng
Keyword(s):  
Barrier Layer ◽  
Strain Relaxation ◽  
Al Content ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
High Al Content

STRUCTURAL PROPERTIES OF NANOCRYSTALLINE Ni–Al SPINEL FERRITES

2011 ◽  
Vol 25 (08) ◽  
pp. 1121-1125 ◽  
Author(s):  
A. T. RAGHAVENDER
Keyword(s):  
Particle Size ◽  
Fourier Transform ◽  
Structural Properties ◽  
Lattice Constant ◽  
Reaction Mechanisms ◽  
Sol Gel ◽  
Ftir Analysis ◽  
X Ray ◽  
Al Content ◽  
Ftir Spectrometer

Ultra fine NiAl x Fe 2-x O 4(0 ≤ x ≤ 1) nanopowders were synthesized by sol-gel method and their structural properties were investigated using X-ray diffractometer (XRD) and fourier transform infrared (FTIR) spectrometer. The particle size D, lattice constant a, density dx decreased with increasing non-magnetic Al content x. The combustion reaction mechanisms were explained with the help of FTIR analysis.

Influence of Al Composition on Electrical and Structural Properties of AlxGa1-xN/AlN/GaN HEMT Materials Grown by MOCVD

2013 ◽  
Vol 34 (12) ◽  
pp. 1646-1650 ◽  
Author(s):  
陈翔 CHEN Xiang ◽  
邢艳辉 XING Yan-hui ◽  
韩军 HAN Jun ◽  
霍文娟 HUO Wen-juan ◽  
钟林健 ZHONG Lin-jian ◽  
...  
Keyword(s):  
Structural Properties ◽  
Gan Hemt

Structural properties of pressure-induced structural phase transition of Si-doped GaAs by angular-dispersive X-ray diffraction

2016 ◽  
Vol 122 (2) ◽  
Author(s):  
Kung-Liang Lin ◽  
Chih-Ming Lin ◽  
Yu-Sheng Lin ◽  
Sheng-Rui Jian ◽  
Yen-Fa Liao ◽  
...  
Keyword(s):  
Phase Transition ◽  
Structural Properties ◽  
Structural Phase Transition ◽  
Structural Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Doped

The Effect of Substrate Orientation on the Properties of (Ga, Al)As Grown by Gas Source Molecular Beam Epitaxy

1988 ◽  
Vol 144 ◽  
Author(s):  
A. Sandhu ◽  
T. FUJII ◽  
H. Ando ◽  
H. Ishikawa ◽  
E. Miyauchi
Keyword(s):  
Growth Rate ◽  
Growth Conditions ◽  
Group V ◽  
Group Iii ◽  
Al Content ◽  
Gas Source ◽  
Compensation Ratio ◽  
Potential Applications ◽  
Si Doped ◽  
Gas Source Mbe

ABSTRACTWe have carried out the first systemmatic investigation on the effect of substrate temperature and arsenic partial pressure on the morphology, growth rate, and compensation ratio of Si-doped GaAs, and the Al content of AlxGa1−xAs grown on just-cut (100), (110), (111)A&B, (311)A&B orientated GaAs substrates by gas source MBE (GSMBE). Triethylgallium ( TEG, Ga(C2H5)3 ) and triethylaluminium ( TEA, Al(C2H5)3 ) were used as group III sources, and solid arsenic ( As4 ) and silicon as a group V and IV sources, respectively. The best GaAs mophology was obtained at relatively high temperatures and arsenic pressures. The A orientations were identified as ‘fast surfaces,’ with the GaAs growth rate being comparable to the (100) orientation. The B orientations were identified as ‘slow surfaces,’ with the GaAs growth rate being much less (approximately 50% for the (111)B orientation ) than on the (100) orientation. The least compensated Si-doped GaAs was grown on the (311)A orientated substrate. The Al content, x, (nominally x=0.27 for (100)) of AlxGas1−xAs grown on (110), (111)A&B, was less than 0.05 and not affected by the growth conditions. The Al content of epilayers grown on (311)A&B ranged between x=0.1 to 0.27, strongly depending on the growth temperature.These results show that using GSMBE we can selectively modifying a large range of (Ga,Al)As crystal properties. Potential applications include the selective growth and realisation of ultra-fine and planar structures and devices.

Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

2010 ◽  
Vol 207 (6) ◽  
pp. 1338-1341 ◽  
Author(s):  
Lutz Kirste ◽  
Taek Lim ◽  
Rolf Aidam ◽  
Stefan Müller ◽  
Patrick Waltereit ◽  
...  
Keyword(s):  
Structural Properties ◽  
Barrier Layers ◽  
Gan Hemt

High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%

2003 ◽  
Vol 200 (1) ◽  
pp. 40-43 ◽  
Author(s):  
Yoshitaka Taniyasu ◽  
Makoto Kasu ◽  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
High Electron ◽  
Al Content ◽  
Si Doped
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