Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

2010 ◽  
Vol 207 (6) ◽  
pp. 1338-1341 ◽  
Author(s):  
Lutz Kirste ◽  
Taek Lim ◽  
Rolf Aidam ◽  
Stefan Müller ◽  
Patrick Waltereit ◽  
...  
Keyword(s):  
Structural Properties ◽  
Barrier Layers ◽  
Gan Hemt

Influence of Al content on electrical and structural properties of Si-doped AlxGa1–xN/GaN HEMT structures

2006 ◽  
Vol 3 (3) ◽  
pp. 486-489 ◽  
Author(s):  
Cuimei Wang ◽  
Xiaoliang Wang ◽  
Guoxin Hu ◽  
Junxi Wang ◽  
Jianping Li
Keyword(s):  
Structural Properties ◽  
Al Content ◽  
Gan Hemt ◽  
Si Doped

Influence of Al Composition on Electrical and Structural Properties of AlxGa1-xN/AlN/GaN HEMT Materials Grown by MOCVD

2013 ◽  
Vol 34 (12) ◽  
pp. 1646-1650 ◽  
Author(s):  
陈翔 CHEN Xiang ◽  
邢艳辉 XING Yan-hui ◽  
韩军 HAN Jun ◽  
霍文娟 HUO Wen-juan ◽  
钟林健 ZHONG Lin-jian ◽  
...  
Keyword(s):  
Structural Properties ◽  
Gan Hemt

Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers

2007 ◽  
Vol 300 (1) ◽  
pp. 168-171 ◽  
Author(s):  
Y. Kawakami ◽  
X.Q. Shen ◽  
G. Piao ◽  
M. Shimizu ◽  
H. Nakanishi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Sheet Resistance ◽  
Barrier Layers ◽  
Gan Hemt ◽  
Algan Barrier

Structural properties of ultraviolet cured polysilazane gas barrier layers on polymer substrates

2014 ◽  
Vol 550 ◽  
pp. 85-89 ◽  
Author(s):  
Arnaud Morlier ◽  
Stéphane Cros ◽  
Jean-Paul Garandet ◽  
Nicole Alberola
Keyword(s):  
Structural Properties ◽  
Gas Barrier ◽  
Polymer Substrates ◽  
Barrier Layers

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers

2011 ◽  
Vol 679-680 ◽  
pp. 808-811
Author(s):  
Fabrizio Roccaforte ◽  
Giuseppe Greco ◽  
Ming Hung Weng ◽  
Filippo Giannazzo ◽  
Vito Raineri
Keyword(s):  
Structural Properties ◽  
Surface Defects ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Near Surface ◽  
Channel Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Current Voltage ◽  
Current Voltage Characteristics

In this work the electrical and structural properties of AlGaN/GaN heterostructures grown onto 8°-off-axis 4H-SiC epilayers were investigated. A morphological and structural analysis of the samples showed the presence of “V-shaped” near-surface defects in the AlGaN layer, with a preferential orientation along the miscut direction [11-20]. In the presence of these defects an anisotropy of the current-voltage characteristics of high electron mobility transistors (HEMTs), fabricated with two different orientations, was observed. The sheet carrier density ns and the channel mobility n were determined from the device characteristics. The results were discussed considering the possible implications for AlGaN/GaN HEMT technology.

scholarly journals Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers

2010 ◽  
Vol 59 (8) ◽  
pp. 5724
Author(s):  
Ding Guo-Jian ◽  
Guo Li-Wei ◽  
Xing Zhi-Gang ◽  
Chen Yao ◽  
Xu Pei-Qiang ◽  
...  
Keyword(s):  
Barrier Layers ◽  
Gan Hemt

Newborn's Preference for Faces

1996 ◽  
Vol 1 (3) ◽  
pp. 200-205 ◽  
Author(s):  
Carlo Umiltà ◽  
Francesca Simion ◽  
Eloisa Valenza
Keyword(s):  
Visual System ◽  
Structural Properties ◽  
Sensory Properties ◽  
Human Face ◽  
System Experiment ◽  
Face Experiment

Four experiments were aimed at elucidating some aspects of the preference for facelike patterns in newborns. Experiment 1 showed a preference for a stimulus whose components were located in the correct arrangement for a human face. Experiment 2 showed a preference for stimuli that had optimal sensory properties for the newborn visual system. Experiment 3 showed that babies directed their attention to a facelike pattern even when it was presented simultaneously with a non-facelike stimulus with optimal sensory properties. Experiment 4 showed the preference for facelike patterns in the temporal hemifield but not in the nasal hemifield. It was concluded that newborns' preference for facelike patterns reflects the activity of a subcortical system which is sensitive to the structural properties of the stimulus.

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