InAs quantum dot formed on GaNAs buffer layer by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 3 (3) ◽  
pp. 528-531 ◽  
Author(s):  
R. Suzuki ◽  
T. Miyamoto ◽  
T. Matsuura ◽  
F. Koyama
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Inas Quantum Dot ◽  
Metalorganic Chemical

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Formation trends in quantum dot growth using metalorganic chemical vapor deposition

2003 ◽  
Vol 93 (6) ◽  
pp. 3529-3534 ◽  
Author(s):  
A. A. El-Emawy ◽  
S. Birudavolu ◽  
P. S. Wong ◽  
Y.-B. Jiang ◽  
H. Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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