Changes in excess carrier recombination dynamics caused by aging of GaN-based blue laser diodes

2005 ◽  
Vol 2 (7) ◽  
pp. 2708-2711
Author(s):  
C. Netzel ◽  
S. Heppel ◽  
S. Miller ◽  
M. Furitsch ◽  
A. Leber ◽  
...  
1998 ◽  
Author(s):  
Amber C. Abare ◽  
Michael P. Mack ◽  
Mark W. Hansen ◽  
R. K. Sink ◽  
Peter Kozodoy ◽  
...  
Keyword(s):  

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.


1988 ◽  
Vol 110 (1) ◽  
pp. 197-204
Author(s):  
F. Koch ◽  
R. Mitdank ◽  
G. Oelgart ◽  
C. Chlupsa

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 5059-5062 ◽  
Author(s):  
Kaduki Komori ◽  
Yosuke Takasu ◽  
Mitsutaka Kumakura ◽  
Yoshiro Takahashi ◽  
Tsutomu Yabuzaki

2019 ◽  
Vol 449 ◽  
pp. 79-85
Author(s):  
M.H.M. Shamim ◽  
M.A. Shemis ◽  
C. Shen ◽  
H.M. Oubei ◽  
O. Alkhazragi ◽  
...  

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