Numerical study of barrier height enhancement in n-In0.35Ga0.65As Schottky diodes using a p-type near-interface layer

2003 ◽  
Vol 0 (3) ◽  
pp. 928-932 ◽  
Author(s):  
J. Osvald
Keyword(s):  
Barrier Height ◽  
Numerical Study ◽  
Schottky Diodes ◽  
Interface Layer ◽  
P Type

scholarly journals The Effect of Sintering Temperature on the Barrier Height of p-type PtSi Schottky Diodes

1991 ◽  
Vol 44 (1) ◽  
pp. 67 ◽  
Author(s):  
Vincent WL Chin ◽  
Stephen M Newbery ◽  
John WV Storey ◽  
Ulrich Theden
Keyword(s):  
Barrier Height ◽  
Sintering Temperature ◽  
Schottky Diodes ◽  
Consistent Difference ◽  
Two Samples ◽  
Different Temperatures ◽  
P Type

The effect of sintering temperature on the barrier height of p-type PtSi Schottky diodes is studied by electrical and infrared photoresponse methods. It is revealed that there is a consistent difference of about 0�06 eV for two samples sintered at different temperatures.

Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI

2006 ◽  
Vol 913 ◽  
Author(s):  
Joachim Knoch ◽  
Min Zhang ◽  
Qing-Tai Zhao ◽  
Siegfried Mantl
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect Transistors ◽  
Interface Layer ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Dopant Segregation ◽  
P Type ◽  
Silicon Interface

AbstractIn this paper we demonstrate the use of dopant segregation during silicidation for decreasing the effective potential barrier height in Schottky-barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs). N-type as well as p-type devices are fabricated with arsenic/boron implanted into the device's source and drain regions prior to silicidation. During full nickel silicidation a highly doped interface layer is created due to dopants segregating at the silicide-silicon interface. This doped layer leads to an increased tunneling probability through the Schottky barrier and hence leads to significantly improved device characteristics. In addition, we show with simulations that employing ultrathin body (UTB) silicon-on-insulator and ultrathin gate oxides allows to further improve the device characteristics.

Schottky Diodes on Si1-x-yGexCy Alloys.

1995 ◽  
Vol 379 ◽  
Author(s):  
M. Mamnor ◽  
C. Guedj ◽  
P. Boucaud ◽  
F. Meyer ◽  
D. Bouchier ◽  
...  
Keyword(s):  
Band Gap ◽  
Barrier Height ◽  
Strain Relaxation ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
Germanium Content ◽  
Hole Effective Mass ◽  
P Type

ABSTRACTWe have recently investigated the properties of W/Si1-xGex films prepared by rapid thermal chemical vapor deposition (RTCVD). The barrier height on p-type, ΦBp, varies as the band gap with the germanium content for totally relaxed films, and increases with strain relaxation, while that on n-type remains rather constant. These results suggest that the Fermi level is pinned relative to the conduction band at the interface of the binary alloy and that the measurement of Schottky barriers is a suitable tool to follow band gap variations. In this work, the effects of carbon incorporation on Schottky barriers have been investigated. The study has been performed on Si1-x-yGexCy films (0≤y≤1.35% with x=10%). The strain retained in the films was determined by X-ray diffraction. Infrared absorption measurements have shown that the carbon is incorporated on substitutional sites. The electrical results indicate the same trends than those observed on the binary alloys, the barrier height on n-type remains rather constant while the barrier height on p-type varies. Adding C leads to an increase of ΦBp, but this increase is too large to be explained in terms of variation of the band gap. The influence of other parameters, such as the doping level and the hole effective mass is discussed.

The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes

2015 ◽  
Vol 1118 ◽  
pp. 270-275 ◽  
Author(s):  
Xian Gao ◽  
Ji Long Tang ◽  
Dan Fang ◽  
Fang Chen ◽  
Shuang Peng Wang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Interface Layer ◽  
Experimental Result ◽  
Electrical Characteristics ◽  
Semiconductor Interface ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

2020 ◽  
Vol 1004 ◽  
pp. 960-972
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Jana Toompuu
Keyword(s):  
Schottky Barrier ◽  
Deep Level ◽  
Numerical Study ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Diffusion Welding ◽  
Schottky Barrier Diodes ◽  
Schottky Rectifiers ◽  
Barrier Inhomogeneities ◽  
P Type

The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Mamor ◽  
E. Finkman ◽  
F. Meyer ◽  
K. Bouziane
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Barrier Heights ◽  
P Type ◽  
Deposition Conditions

AbstractThe Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from I–V measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer

2005 ◽  
Vol 483-485 ◽  
pp. 737-740 ◽  
Author(s):  
Francesco Moscatelli ◽  
Andrea Scorzoni ◽  
Antonella Poggi ◽  
Mariaconcetta Canino ◽  
Roberta Nipoti
Keyword(s):  
Barrier Height ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Contact Resistivity ◽  
Emission Model ◽  
A Value ◽  
Transmission Line Method ◽  
P Type ◽  
Ion Implanted

Recently Ni/SiC contacts have been studied in order to achieve very low contact resistivity (rc) values on n-type SiC. In this work contact resistivity values of Ni-silicide contacts to n-type ion implanted 6H-SiC are analyzed aiming at extracting the Schottky Barrier Height (SBH). The n-type ion implanted 6H-SiC specimens were annealed at 1300, 1500, 1650°C for 20 min in a high purity Ar ambient. The rc values have been extracted from Transmission Line Method (TLM) measurements in the range of temperatures 25-290°C. The rc values are in the range 1-5×10-5 Wcm2 depending on the annealing temperature. The SBH fBn has been extracted by exploiting the dependence of the contact resistivity on the temperature. By using the field emission model, the value obtained for fBn on our samples is in the range 1.1-1.3 eV depending on the annealing temperature. The SBH on p-type 6H-SiC has been evaluated on Schottky diodes by means of both IV and C-V measurements. A value of qfBp= (1.75±0.05) eV has been obtained on p-type SiC through the C-V method. The average SBH extracted from I-V data collected at room temperature is (1.19±0.03) eV and this value increases as a function of the temperature until (1.50±0.01) eV at 290°C. Differences between values of SBH extracted from I−V and from C−V measurements are explained in terms of inhomogeneous barrier height

scholarly journals I-VCharacteristics of PtxCo1−x(x= 0.2, 0.5, and 0.7) Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-6
Author(s):  
M. Erkovan ◽  
E. Şentürk ◽  
Y. Şahin ◽  
M. Okutan
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ideality Factor ◽  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Native Oxide ◽  
Analysis Technique ◽  
Current Voltage ◽  
P Type

Three different chemical ratios of PtxCo1−xthin films were grown on p-type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V) measurements of metal-semiconductor (MS) Schottky diodes were carried out at room temperature. From theI-Vanalysis of the samples, ideality factor (n), barrier height (ϕ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from theI-Vcharacteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

Parameter Extraction from the Reverse I-V and C-V Characteristics of an Epitaxial p-InP/Au Schottky Diode

1993 ◽  
Vol 318 ◽  
Author(s):  
A. Singh ◽  
P. Cova ◽  
R. A. Masut
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Parameter Extraction ◽  
Interface Layer ◽  
Least Square ◽  
Reverse Bias Voltage ◽  
Zero Bias ◽  
Current Voltage

ABSTRACTEpitaxial p-InP/Au Schottky diodes were fabricated by evaporation of Au onto Zn doped epitaxial layers of InP grown by MOVPE, on a highly doped InP substrate. The reverse current-voltage (Ir-Vr) and 1 MHz capacitance-voltage (C-V) characteristics of the Au/p-InP diodes were measured in the temperature range 220-393 K. At all temperatures, soft reverse current-voltage characteristics were observed, which may be due to the decrease in the effective Schottky barrier height (øbr) with the increase of Vr. The voltage dependence of the reverse current was well described in terms of the interface layer thermionic emission (ITE) model which incorporates the effects of applied reverse voltage drop and the transmission coefficient across the interface layer and image force lowering of the barrier height into the thermionic emission theory. A self consistent iteration and least square fitting technique was used to obtain the zero bias barrier height (øbo) and interface layer capacitance (Ci) from the Ir-Vr data. Both, the Ir-Vr and the C-V data were analyzed under the assumption of reverse bias voltage independence of the charge trapped in the interface states, which was supported by our experimental data. The values of øbo obtained from the C-V measurements agreed well with those obtained from the Ir-Vr data for a value of 0.45 AK−2cm−2 for the effective Richardson constant (Aeff).

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

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