Monte Carlo simulation of high-order harmonics generation in bulk semiconductors and submicron structures

2004 ◽  
Vol 1 (6) ◽  
pp. 1367-1376 ◽  
Author(s):  
D. Persano Adorno ◽  
M. Zarcone ◽  
G. Ferrante ◽  
P. Shiktorov ◽  
E. Starikov ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Order ◽  
Bulk Semiconductors ◽  
Submicron Structures ◽  
Harmonics Generation

MONTE CARLO SIMULATION OF TEMPERATURE-PROGRAMMED DESORPTION CO/Cu(110) AND CO2/Cu(100) SYSTEMS

2004 ◽  
Vol 11 (02) ◽  
pp. 137-143 ◽  
Author(s):  
KH. ZAKERI ◽  
A. DASHTI
Keyword(s):  
Activation Energy ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Excellent Agreement ◽  
Temperature Programmed Desorption ◽  
High Order ◽  
Kinetics And Mechanism ◽  
Lateral Interaction ◽  
Desorption Rate ◽  
Temperature Programmed

In this investigation, we have studied the kinetics and mechanism of desorption of CO from the Cu (110) surface using a new Monte Carlo simulation and putting emphasis on high order lateral interaction. According to our simulated TPD spectra, for β=10 K/s the maximum desorption rate occurs at Tm=218.6 K. Furthermore, analysis of simulated TPD spectra of CO desorption shows that it is strongly lateral-interactive and results an activation energy of CO desorption from Cu (110) that is Ed=66.6 Kj/mol. These simulated results are compared with other reported results and show excellent agreement. After that we have investigated the kinetics and mechanism of desorption of CO 2 from the Cu (100) surface using a Monte Carlo simulation. According to our simulated TPD spectra, for β=0.5 K/s the maximum desorption rate occurs at Tm=89.7 K. Analysis of simulated TPD spectra of CO 2 desorption shows that it is not strongly lateral-interactive and results in an activation energy of CO desorption from Cu (100) that is Ed=25.2 Kj/mol. Finally, the CO / Cu (110) system is compared with the CO 2/ Cu (100) system.

Monte carlo simulation of threshold bandwidth for high-order harmonic extraction

2003 ◽  
Vol 50 (5) ◽  
pp. 1171-1178 ◽  
Author(s):  
P. Shiktorov ◽  
E. Starikov ◽  
V. Gruzinskis ◽  
S. Perez ◽  
T. Gonzlez ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Order ◽  
High Order Harmonic ◽  
Harmonic Extraction

scholarly journals Global Monte Carlo Simulation with High Order Polynomial Expansions

2007 ◽  
Author(s):  
William R Martin ◽  
James Paul Holloway ◽  
Kaushik Banerjee ◽  
Jesse Cheatham ◽  
Jeremy Conlin
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Order ◽  
Order Polynomial ◽  
Polynomial Expansions

scholarly journals Monte Carlo simulation of harmonic generation in InP

2001 ◽  
Vol 19 (1) ◽  
pp. 81-84 ◽  
Author(s):  
D. PERSANO ADORNO ◽  
M. ZARCONE ◽  
G. FERRANTE
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
External Field ◽  
Harmonic Generation ◽  
Electron Motion ◽  
Physical Mechanisms ◽  
Linearly Polarized ◽  
Gunn Effect ◽  
Bulk Semiconductor ◽  
Harmonics Generation

Harmonics spectra in an n-type InP bulk semiconductor showing up to the 13th harmonic are reported. The external field is linearly polarized with the frequency ν = 100 GHz. Calculations are based on a Monte Carlo simulation for the electron motion in the conducting band and on an electrodynamics equation for the harmonics generation. The effect of a significant reduction of efficiency in the generation of particular harmonics is found, and is traced back to a sort of alternating field Gunn effect. A short analysis of the different physical mechanisms giving rise to harmonics generation is presented.

Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors

1990 ◽  
Vol 42 (9) ◽  
pp. 5685-5692 ◽  
Author(s):  
R. P. Joshi ◽  
R. O. Grondin ◽  
D. K. Ferry
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Hole ◽  
Bulk Semiconductors

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

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