Photoluminescence of Octahedrally Coordinated Mn2+ in Lithium Gallate

1990 ◽  
Vol 162 (1) ◽  
pp. K59-K61 ◽  
Author(s):  
R. J. M. Da Fonseca ◽  
T. Abritta
Keyword(s):  
Lithium Gallate

In-plane anisotropic strain of elastically and plastically deformed III-nitrides on lithium gallate

2009 ◽  
Vol 517 (24) ◽  
pp. 6508-6511
Author(s):  
Gon Namkoong ◽  
Sa Huang ◽  
Michael Moseley ◽  
W. Alan Doolittle
Keyword(s):  
Anisotropic Strain ◽  
Lithium Gallate

GaN metal–semiconductor–metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy

2001 ◽  
Vol 79 (9) ◽  
pp. 1372-1374 ◽  
Author(s):  
S. W. Seo ◽  
K. K. Lee ◽  
Sangbeom Kang ◽  
S. Huang ◽  
William A. Doolittle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Semiconductor Metal ◽  
Lithium Gallate

Evidence of CO2Chemisorption at High Temperature in Lithium Gallate (Li5GaO4)

2011 ◽  
Vol 40 (5) ◽  
pp. 504-505 ◽  
Author(s):  
Tatiana Ávalos-Rendón ◽  
Heriberto Pfeiffer
Keyword(s):  
High Temperature ◽  
Lithium Gallate

The growth of GaN on lithium gallate (LiGaO2) substrates for material integration

2000 ◽  
Vol 29 (7) ◽  
pp. 894-896 ◽  
Author(s):  
April S. Brown ◽  
W. Alan Doolittle ◽  
Sangbeom Kang ◽  
Jeng-Jung Shen ◽  
Z. L. Wang ◽  
...  
Keyword(s):  
Lithium Gallate

Raman Scattering Study of Lithium Gallate LiGa5O8

1986 ◽  
Vol 55 (12) ◽  
pp. 4500-4503 ◽  
Author(s):  
Kazuhiro Hara ◽  
Yoshihiro Ishibashi
Keyword(s):  
Raman Scattering ◽  
Scattering Study ◽  
Lithium Gallate

Compliant Substrate Processes

1999 ◽  
Vol 570 ◽  
Author(s):  
W. A. Doolittle ◽  
A. S. Brown
Keyword(s):  
Defect Density ◽  
Coefficient Of Thermal Expansion ◽  
Growth Dynamics ◽  
Bonding Layer ◽  
New Approach ◽  
Compliant Substrate ◽  
Compliant Substrates ◽  
Potential Applications ◽  
Processing Effects ◽  
Lithium Gallate

ABSTRACTRecent results indicate that compliant substrates offer significant promise as a new approach for strain management in semiconductors. The potential applications include 1) the growth of device-quality highly mismatched materials on dissimilar substrates, and 2) the lateral control of material properties resulting from the effects of strain on bandstructure and/or growth dynamics. A significant amount of research in this area is dedicated to the reduction of extrinsic processing effects resulting from compliant substrate fabrication, and the development of simple models for understanding the observed reduction in defect density and/or strain in the epitaxial films grown on compliant substrates. A recent focus in our work has been on the growth of GaN on a novel and easily removable substrate -lithium gallate- for the regrowth on a bonded GaN template. The first step in this approach is the optimization of the growth of GaN on lithium gallate. In addition, this approach requires the use of an appropriate bonding layer to reduce the strain or defect production during growth due to coefficient of thermal expansion mismatches between the GaN sample and the handle wafer. Our work in this area will be highlighted in the context of an overview of various compliant substrate approaches and current results that indicate their efficacy.

Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy

2000 ◽  
Vol 6 (S2) ◽  
pp. 1106-1107
Author(s):  
Z. R. Dai ◽  
Sangbeom Kang ◽  
W. Alan Doolittle ◽  
Z. L. Wang ◽  
April S. Brown
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
Interfacial Structure ◽  
High Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Average Lattice ◽  
Lithium Gallate

The performance of III-Nitride based Light Emitting Diodes (LEDs), LASERs, GaN/AlGaN MODFETs (Modulation-doped Field Effect Transistors) and HEMTs (High Electron Mobility Transistors) have been improved dramatically over the past few years [1,2], despite the relatively poor material quality of GaN, as compared to GaAs, for example. The intrinsic properties of the materials system make it extremely well suited to both optoelectronic and microwave power transistor applications. Typically, GaN is grown on substrates such as GaAs, Al2O3 (sapphire) or SiC with large lattice mismatch. This has usually resulted in an extremely high defect density in the GaN layer. The growth of GaN on lithium gallate LiGaO2 (LGO) affords many advantages compared to all other available substrates. LGO offers the smallest average lattice mismatch of any available substrate for the Ill-nitrides. This facilitates the growth of high quality GaN directly on Lithium Gallate without the need for a defective buffer to decouple the strain associated with the large lattice mismatch of other substrates [3].

Recent Advances in III-Nitride Devices Grown on Lithium Gallate

2001 ◽  
Vol 188 (2) ◽  
pp. 491-495 ◽  
Author(s):  
W.A. Doolittle ◽  
A.S. Brown ◽  
S. Kang ◽  
S.W. Seo ◽  
S. Huang ◽  
...  
Keyword(s):  
Recent Advances ◽  
Lithium Gallate

Relationship of crystallographic polarity to piezoelectric, pyroelectric and chemical etching in Li2GeO3 and LiGaO2 single crystals

1983 ◽  
Vol 16 (1) ◽  
pp. 138-140 ◽  
Author(s):  
A. S. Bhalla ◽  
L. L. Tongson ◽  
R. E. Newnham
Keyword(s):  
Single Crystals ◽  
Chemical Etching ◽  
Piezoelectric Coefficient ◽  
Surface Scattering ◽  
Sign Convention ◽  
Relationship Of ◽  
Piezoelectric Constants ◽  
Lithium Gallate

Absolute assignment of the atomic planes of Li2GeO3 and LiGaO2 is made by ion surface scattering (ISS) and the crystallographic polarity is defined. Pyroelectric coefficients p 3 and the piezoelectric constants d 33 of lithium metagermanate and lithium gallate are determined. Pyroelectric and piezoelectric coefficient signs when defined on the crystallographic sign convention of the axes are negative and positive, respectively. The results are correlated with chemical etching studies.

Selective Wet Etching of Lithium Gallate

1998 ◽  
Vol 145 (5) ◽  
pp. L88-L90 ◽  
Author(s):  
Thomas J. Kropewnicki ◽  
W. Alan Doolittle ◽  
Carrie Carter‐Coman ◽  
Sangboem Kang ◽  
Paul A. Kohl ◽  
...  
Keyword(s):  
Wet Etching ◽  
Lithium Gallate
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