GaN metal–semiconductor–metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy

2001 ◽  
Vol 79 (9) ◽  
pp. 1372-1374 ◽  
Author(s):  
S. W. Seo ◽  
K. K. Lee ◽  
Sangbeom Kang ◽  
S. Huang ◽  
William A. Doolittle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Semiconductor Metal ◽  
Lithium Gallate

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

scholarly journals High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

2017 ◽  
Vol 110 (22) ◽  
pp. 221107 ◽  
Author(s):  
Anamika Singh Pratiyush ◽  
Sriram Krishnamoorthy ◽  
Swanand Vishnu Solanke ◽  
Zhanbo Xia ◽  
Rangarajan Muralidharan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Deep Uv

Intermediate temperature molecular beam‐epitaxy growth for design of large‐area metal‐semiconductor‐metal photodetectors

1994 ◽  
Vol 64 (23) ◽  
pp. 3151-3153 ◽  
Author(s):  
Bahram Nabet ◽  
Arthur Paolella ◽  
Paul Cooke ◽  
Mary L. Lemuene ◽  
Robert P. Moerkirk ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Intermediate Temperature ◽  
Molecular Beam Epitaxy Growth ◽  
Large Area ◽  
Metal Semiconductor Metal

InGaAs/GaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 1.3 um grown by molecular beam epitaxy

1991 ◽  
Author(s):  
Boris S. Elman ◽  
Jagannath Chirravuri ◽  
A. N. M. M. Choudhury ◽  
Andrew Silletti ◽  
Andrew J. Negri ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Semiconductor Metal

Characterization of Tin Oxide Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 1633 ◽  
pp. 13-18
Author(s):  
G. Medina ◽  
P.A. Stampe ◽  
R.J. Kennedy ◽  
R.J. Reeves ◽  
G.T. Dang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Electrical Measurements ◽  
Device Structure ◽  
Metal Semiconductor Metal ◽  
P Type

ABSTRACTWe describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited significant persistent photoconductivity upon ultraviolet excitation in a metal-semiconductor-metal device structure.

scholarly journals Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy

2019 ◽  
Author(s):  
Ravindra S. Pokharia ◽  
Krista Khiangte ◽  
Jaswant S. Rathore ◽  
Jan Schmidt ◽  
Jörg Osten ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Semiconductor Metal

Metal Semiconductor Metal Photodetectors and Modulators for Long Wavelength Applications: Optimization of Solid Source Molecular Beam Epitaxy of AlInAs/(Al)GaInAs-Heterostructures

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1303-1308
Author(s):  
Thomas Kummetz ◽  
Siegfried Dirr ◽  
Markus Sickmöller ◽  
Annegret Herrmann ◽  
Wolfgang Kowalsky
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Metal Semiconductor Metal

Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy

2000 ◽  
Vol 36 (11) ◽  
pp. 1262-1266 ◽  
Author(s):  
S. Wang ◽  
T. Li ◽  
J.M. Reifsnider ◽  
B. Yang ◽  
C. Collins ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Semiconductor Metal

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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