Electron–Hole Exchange Interaction of Excitons in Direct Band Gap Cubic Semiconductors with Degenerated Valence Band

1990 ◽  
Vol 161 (2) ◽  
pp. 637-646
Author(s):  
Nguyen Que Huong ◽  
Nguyen Toan Thang ◽  
Nguyen Ai Viet
Keyword(s):  
Exchange Interaction ◽  
Band Gap ◽  
Valence Band ◽  
Electron Hole ◽  
Direct Band Gap ◽  
Direct Band

Electron‐hole recombination in nitrogen‐doped direct‐band‐gap GaAs1−xPx

1976 ◽  
Vol 47 (8) ◽  
pp. 3625-3629 ◽  
Author(s):  
R. J. Nelson ◽  
N. Holonyak ◽  
W. O. Groves ◽  
D. L. Keune
Keyword(s):  
Band Gap ◽  
Electron Hole ◽  
Nitrogen Doped ◽  
Direct Band Gap ◽  
Direct Band ◽  
Hole Recombination

Electron-hole plasma expansion in the direct-band-gap semiconductors CdS and CdSe

1985 ◽  
Vol 32 (4) ◽  
pp. 2407-2418 ◽  
Author(s):  
F. A. Majumder ◽  
H.-E. Swoboda ◽  
K. Kempf ◽  
C. Klingshirn
Keyword(s):  
Band Gap ◽  
Plasma Expansion ◽  
Electron Hole ◽  
Direct Band Gap ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Direct Band

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

2015 ◽  
Vol 54 (10) ◽  
pp. 3112-3115 ◽  
Author(s):  
Shengli Zhang ◽  
Zhong Yan ◽  
Yafei Li ◽  
Zhongfang Chen ◽  
Haibo Zeng
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band
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