scholarly journals Growth of Self‐Passivating Oxide Layers on Aluminum—Pressure and Temperature Dependence

2021 ◽  
pp. 2000559
Author(s):  
Jürgen Gorobez ◽  
Björn Maack ◽  
Niklas Nilius
Keyword(s):  
Temperature Dependence ◽  
Oxide Layers ◽  
Passivating Oxide

Dynamics and temperature dependence of etching processes of porous and barrier aluminum oxide layers

2004 ◽  
Vol 49 (15) ◽  
pp. 2487-2494 ◽  
Author(s):  
Dmitri A. Brevnov ◽  
G.V. Rama Rao ◽  
Gabriel P. López ◽  
Plamen B. Atanassov
Keyword(s):  
Aluminum Oxide ◽  
Temperature Dependence ◽  
Oxide Layers

scholarly journals Titelbild: Stabilization of Undercooled Metals via Passivating Oxide Layers (Angew. Chem. 11/2021)

2021 ◽  
Vol 133 (11) ◽  
pp. 5633-5633
Author(s):  
Andrew Martin ◽  
Boyce S. Chang ◽  
Alana M. Pauls ◽  
Chuanshen Du ◽  
Martin Thuo
Keyword(s):  
Oxide Layers ◽  
Passivating Oxide

scholarly journals Stabilization of Undercooled Metals via Passivating Oxide Layers

2021 ◽  
Author(s):  
Andrew Martin ◽  
Boyce S. Chang ◽  
Alana M. Pauls ◽  
Chuanshen Du ◽  
Martin Thuo
Keyword(s):  
Oxide Layers ◽  
Passivating Oxide

scholarly journals Differences Between Doped and Undoped Zirconium Alloy Oxide Layers

10.14311/1161 ◽  
2010 ◽  
Vol 50 (2) ◽  
Author(s):  
H. Frank
Keyword(s):  
Temperature Dependence ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Zirconium Oxide ◽  
Zirconium Alloy ◽  
Oxide Semiconductors ◽  
Oxide Layers ◽  
Type Reduction

2 eV and the temperature dependence of resistivity, electron mobility and carrier concentration, and also the behavior of injection and extraction currents, were found to be equal inside the error limits, thus proving the doping to be ineffective. Zirconium oxide fits into the group of oxide semiconductors, being an n-type reduction semiconductor, conduction depending on stoichiometric deviation, i.e. missing oxygen.

Temperature Dependence of Nitrogen Accumulation at SiO2/Si by N2O- and by NO-Oxidation

1995 ◽  
Vol 387 ◽  
Author(s):  
G. Weidner ◽  
D. Kröger ◽  
M. Weidner ◽  
K. Tittelbach-Helmrich
Keyword(s):  
Partial Pressure ◽  
Temperature Dependence ◽  
No Oxidation ◽  
Nitrogen Accumulation ◽  
Thermal Budget ◽  
Oxide Layers ◽  
Accumulation Model ◽  
Thin Oxide ◽  
Low Thermal Budget ◽  
Simultaneous Accumulation

AbstractThis paper investigates conditions of low thermal budget N2O and NO oxidation with simultaneous accumulation of 0.5 to 1 at% nitrogen at the SiO2/Si interface of thin oxide layers. A nitrogen accumulation model is presented. It is concluded that the nitrogen accumulation should be realized with oxidizing conditions at the interface to silicon and it is proposed to control the NO partial pressure in reactor gas for the desired nitrogen amount at tolerable thermal budget.

PtSi Contact Metallurgy by Different Formation Processes

1985 ◽  
Vol 54 ◽  
Author(s):  
Chin-An Change ◽  
H. -C. Huang ◽  
A. Segmüller ◽  
F. E. Turene ◽  
B. Cunningham ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Surface Oxide ◽  
Surface Oxide Layer ◽  
Formation Processes ◽  
High Quality ◽  
Aqua Regia ◽  
Oxide Layers ◽  
Single Temperature ◽  
Passivating Oxide

ABSTRACTPtSi films have been formed using sputtered Pt and different annealing sequences and ambients. A clear dependence on the annealing sequence and ambient is observed for both the PtSi films and the passivating oxide layers formed. The single-temperature process at 550°C using forming gas (N2-H2 9:1), nitrogen and oxygen shows incomplete reactions between Pt and Si, with a surface oxide layer of poor resistance against etching in aqua regia. A three-temperature process using forming gas is shown to provide complete reactions between Pt and Si, with a surface oxide layer of excellent resistance against aqua regia. The three-temperature process using nitrogen or oxygen, however, fails to provide films of high quality, and the results are similar to those obtained by the single-temperature process in various gases.

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Temperature Dependence of Magnetic Domains and Wall Structures

1972 ◽  
Vol 30 ◽  
pp. 496-497
Author(s):  
Sonoko Tsukahara ◽  
Tadami Taoka ◽  
Hisao Nishizawa
Keyword(s):  
Temperature Dependence ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Iron Film ◽  
Objective Lens ◽  
Lorentz Microscopy ◽  
Domain Structures ◽  
Wall Structures ◽  
Crystal Films ◽  
Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

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