X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

2020 ◽  
Vol 257 (4) ◽  
pp. 1900579
Author(s):  
Victor Yon ◽  
Névine Rochat ◽  
Matthew Charles ◽  
Emmanuel Nolot ◽  
Patrice Gergaud
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Threading Dislocation Density

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

2017 ◽  
Vol 26 (12) ◽  
pp. 127309 ◽  
Author(s):  
Yuan-Hao Miao ◽  
Hui-Yong Hu ◽  
Xin Li ◽  
Jian-Jun Song ◽  
Rong-Xi Xuan ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Epitaxial Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Threading Dislocation Density

Dislocation Distributions in Cd1-xHgxTe/CdTe and Cd1-xHgxTe/Cd1-yZnyTe Grown by Liquid Phase Epitaxy

1994 ◽  
Vol 356 ◽  
Author(s):  
C. C. R. Watson ◽  
K. Durose ◽  
E. O’Keefe ◽  
J. M. Hudson ◽  
B. K. Tanner
Keyword(s):  
Liquid Phase ◽  
Dislocation Density ◽  
Liquid Phase Epitaxy ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Densities ◽  
Threading Dislocation Density ◽  
O 24

Epilayers of LPE Cdo.24Hgo.76Te grown on (111)B CdTe and Cdi-xZnxTe substrates have been examined by defect etching and triple axis x-ray diffraction. Defect etching of bevelled layers has shown the threading dislocation density to fall with increasing distance from the heterointerface, for distances <6μm. In thicker regions however a constant ‘background’ dislocation density is observed. Background dislocation densities of ∼ 3 x 105cm-2 and 9 x 104cm-2 have been measured for layers grown on CdTe and Cdo.96Zn0.04Te respectively, this is compared with a substrate dislocation density of ∼ 3 x 104cm-2 measured in both types of substrates. The increase in the dislocation density within the epilayers compared with the corresponding substrate is discussed. An explanation is also given for the displacement of the peak dislocation density, from the interface to within the layer, observed in the Cd0.76Hg0.24Te / Cd0.96Zn0.04Te system.

Defect Reduction in Cd1-xZnxTe Epilayers on GaAs Substrates

1994 ◽  
Vol 299 ◽  
Author(s):  
Saket Chadda ◽  
Kevin Malloy ◽  
John Reno
Keyword(s):  
Threading Dislocation ◽  
Full Width ◽  
X Ray Diffraction ◽  
Defect Reduction ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Optimum Period ◽  
Bulk Alloys

AbstractCd0.91Zn0.09Te/CdTe multilayers of various period thicknesses were inserted into Cd0.955Zn0.045Te bulk alloys grown on (001) GaAs. The net strain of the multilayer on the underlying Cd0.955Zn0.045Te was designed to be zero. X-ray diffraction full width at half maximum (FWHM) was used as a means to optimize the period thickness of the multilayer. Transmission electron microscopy of the optimum period thickness samples demonstrated four orders of magnitude decrease in the threading dislocation density. Mechanism of bending by equi-strained multilayers is discussed.

Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates

2006 ◽  
Vol 527-529 ◽  
pp. 1505-1508
Author(s):  
Ümit Özgür ◽  
Y. Fu ◽  
Cole W. Litton ◽  
Y.T. Moon ◽  
F. Yun ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Structural Quality ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Porous Network ◽  
X Ray ◽  
Radiative Efficiency ◽  
Decay Times ◽  
Threading Dislocation Density

Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on in situ-formed SiN and TiN porous network templates. The room temperature carrier decay time of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 μm-thick high quality freestanding GaN (1.73 ns). The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably with the use of SiN and TiN layers, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.

Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy

MRS Advances ◽  
2018 ◽  
Vol 3 (18) ◽  
pp. 931-936
Author(s):  
F. B. Abas ◽  
R. Fujita ◽  
S. Mouri ◽  
T. Araki ◽  
Y. Nanishi
Keyword(s):  
Surface Modification ◽  
Electrical Properties ◽  
Dislocation Density ◽  
Hall Effect Measurement ◽  
Threading Dislocation ◽  
X Ray ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Order Of Magnitude

ABSTRACTThe objective of this study was to investigate the relationship between the thickness of N radical irradiated InN template with crystallographic quality and electrical properties of InN film grown with the previously proposed method, in situ surface modification by radical beam irradiation. In this study, three InN samples were grown with this method on different thickness of irradiated templates. The crystallographic quality of InN films was analyzed by X-ray diffraction and the electrical properties were studied by Hall effect measurement. InN grown on 100 nm thick irradiated template shows lower full-width at half-maximum of X-ray rocking curves and lower carrier concentration compared to InN grown on 200 nm and 450 nm thick irradiated templates. Transmission electron microscopy revealed that threading dislocation density in the InN film decreased by an order of magnitude to ∼4.6×109cm-2. These results suggest that this method is possible for reduction of threading dislocation density in InN and the thickness of irradiated template should be minimized for higher crystallographic quality and electrical properties of the entire InN film.

Growth of Improved GaAs/Si: Suppression of Volmer-Weber Nucleation for Reduced Threading Dislocation Density

1998 ◽  
Vol 535 ◽  
Author(s):  
P. J. Taylor ◽  
W.A. Jesser ◽  
G. Simonis ◽  
W. Chang ◽  
M. Lara-Taysing ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystal ◽  
Threading Dislocation ◽  
Full Width ◽  
Half Maximum ◽  
Growth Technique ◽  
X Ray ◽  
Threading Dislocation Density ◽  
Island Coalescence ◽  
Initial Deposition

AbstractThe growth of reduced dislocation density GaAs/Si is performed by a novel two-step technique where the first epitaxy step takes place at 75° C and the second is performed at 580° C. The initial deposition is single crystal, continuous, and planar such that there is no contribution to the dislocation density from Volmer-Weber island coalescence and no trapping of dislocations in pinholes. Using this new growth technique, a reduced dislocation density the order of 106/cm2 was obtained. The improved crystallinity is indicated by the more narrow x-ray full-width-at-half-maximum (FWHM) value of 110 arcseconds. GaAs p-i-n diodes were grown on the reduced dislocation density GaAs/Si and it was found that the resistivity of the intrinsic region for the heteroepitaxial diodes was similar to homoepitaxial ones for small mesa sizes.

Dynamical X-Ray Diffraction Analysis of a GaAs/In0.3Ga0.7As Single Quantum Well Grown on a GaAs (001) Substrate

2018 ◽  
Vol 27 (01n02) ◽  
pp. 1840010
Author(s):  
F. A. Althowibi ◽  
J. E. Ayers
Keyword(s):  
Quantum Well ◽  
Bragg Peak ◽  
Threading Dislocation ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Single Quantum Well ◽  
X Ray ◽  
Mosaic Crystal ◽  
Crystal Model ◽  
Threading Dislocation Density

We applied the mosaic crystal model to calculate the dynamical x-ray rocking curves for a coherently-strained GaAs/In0.3Ga0.7As/GaAs single quantum well grown epitaxially on a GaAs (001) substrate for a number of reflection profiles, including 004, 113, 224, 044 and 444 reflections. We show that it is possible to estimate the threading dislocation density in the quantum well, and therefore detect the pseudomorphic-metamorphic transition, using the widths or normalized intensities of the primary quantum well Bragg peak, or using the widths of the Pendellösung fringes associated with the quantum well structure.

scholarly journals On the Study of Dislocation Density in MBE GaSb-Based Structures

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1074
Author(s):  
Agata Jasik ◽  
Dariusz Smoczyński ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Measurement Techniques ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Gaas Sample ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Threading Dislocation Density

The results of the study on threading dislocation density (TDD) in homo- and heteroepitaxial GaSb-based structures (metamorphic layers, material grown by applying interfacial misfit array (IMF) and complex structures) deposited using molecular beam epitaxy are presented. Three measurement techniques were considered: high-resolution x-ray diffraction (HRXRD), etch pit density (EPD), and counting tapers on images obtained using atomic force microscopy (AFM). Additionally, high-resolution transmission electron microscopy (HRTEM) was used for selected samples. The density of dislocations determined using these methods varied, e.g., for IMF-GaSb/GaAs sample, were 6.5 × 108 cm−2, 2.2 × 106 cm−2, and 4.1 × 107 cm−2 obtained using the HRXRD, EPD, and AFM techniques, respectively. Thus, the value of TDD should be provided together with information about the measurement method. Nevertheless, the absolute value of TDD is not as essential as the credibility of the technique used for optimizing material growth. By testing material groups with known parameters, we established which techniques can be used for examining the dislocation density in GaSb-based structures.

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