scholarly journals Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters

2019 ◽  
Vol 257 (1) ◽  
pp. 1900286
Author(s):  
Michael Schöler ◽  
Maximilian W. Lederer ◽  
Philipp Schuh ◽  
Peter J. Wellmann
Keyword(s):  
Silicon Carbide ◽  
Point Defects ◽  
Process Parameters ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

scholarly journals Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2487 ◽  
Author(s):  
Michael Schöler ◽  
Clemens Brecht ◽  
Peter J. Wellmann
Keyword(s):  
Silicon Carbide ◽  
Point Defects ◽  
Nitrogen Vacancy ◽  
Temperature Dependent ◽  
Intrinsic Defects ◽  
Intermediate Band ◽  
Induced Changes ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications, such as intermediate-band solar cells, photoelectrochemical water splitting, and quantum key distribution, just to name a few. All these applications critically depend on further understanding of defect behavior at the atomic level and the possibility to actively control distinct defects. In this work, dopants as well as intrinsic defects were introduced into the 3C-SiC material in situ during sublimation growth. A series of isochronal temperature treatments were performed in order to investigate the temperature-dependent annealing behavior of point defects. The material was analyzed by temperature-dependent photoluminescence (PL) measurements. In our study, we found a variation in the overall PL intensity which can be considered as an indication of annealing-induced changes in structure, composition or concentration of point defects. Moreover, a number of dopant-related as well as intrinsic defects were identified. Among these defects, there were strong indications for the presence of the negatively charged nitrogen vacancy complex (NC–VSi)−, which is considered a promising candidate for spin qubits.

scholarly journals Macrodefects in Cubic Silicon Carbide Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 375-378 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Justinas Palisaitis ◽  
Remigijus Vasiliauskas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Temperature Gradient ◽  
Early Stage ◽  
Growth Conditions ◽  
Temperature Ramp ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

Thermal stability of irradiation-induced point defects in cubic silicon carbide

2009 ◽  
Vol 106 (8) ◽  
pp. 083509 ◽  
Author(s):  
Jérémie Lefèvre ◽  
Jean-Marc Costantini ◽  
Stéphane Esnouf ◽  
Guillaume Petite
Keyword(s):  
Thermal Stability ◽  
Silicon Carbide ◽  
Point Defects ◽  
Cubic Silicon Carbide ◽  
Thermal Stability Of

Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds

2010 ◽  
Vol 645-648 ◽  
pp. 175-178 ◽  
Author(s):  
Remigijus Vasiliauskas ◽  
Maya Marinova ◽  
Mikael Syväjärvi ◽  
Alkyoni Mantzari ◽  
Ariadne Andreadou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Structural Characterization ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

Energetics of native point defects in cubic silicon carbide

2004 ◽  
Vol 38 (3) ◽  
pp. 437-444 ◽  
Author(s):  
F. Bernardini ◽  
A. Mattoni ◽  
L. Colombo
Keyword(s):  
Silicon Carbide ◽  
Point Defects ◽  
Native Point Defects ◽  
Cubic Silicon Carbide

scholarly journals Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC

2019 ◽  
Vol 963 ◽  
pp. 301-304
Author(s):  
Abdul Al Atem ◽  
Victor Bratus ◽  
Bruno Canut ◽  
Jeremie Lefevre ◽  
Gérard Guillot ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Point Defects ◽  
Epr Spectroscopy ◽  
Proton Irradiation ◽  
Paramagnetic Resonance ◽  
Photoluminescence Study ◽  
Infra Red ◽  
Cubic Silicon Carbide ◽  
Electron Paramagnetic

Combined Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopy have been used to characterize cubic silicon carbide (3C-SiC) samples after electron and proton irradiation. We have studied the effects of the thermal annealing (500-1000°C) on the PL intensity in the visible and the near infra-red (NIR) ranges and identified the point defects formation after these two processes of irradiation.

Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide
Sign in / Sign up

Export Citation Format

Share Document