A Comparative Study of Field Emission From Pristine, Ion‐Treated and Tungsten Nanoparticle‐Decorated p‐Type Silicon Tips

2019 ◽  
Vol 256 (9) ◽  
pp. 1800646 ◽  
Author(s):  
Victor I. Kleshch ◽  
Pavel Serbun ◽  
Dirk Lützenkirchen‐Hecht ◽  
Anton S. Orekhov ◽  
Victor E. Ivanov ◽  
...  
Keyword(s):  
Comparative Study ◽  
Field Emission ◽  
Type Silicon ◽  
P Type ◽  
And Tungsten

Field emission properties of p-type silicon tips decorated with tungsten nanoparticles

2017 ◽  
Author(s):  
Victor Kleshch ◽  
Pavel Serbun ◽  
Anton Orekhov ◽  
Dirk Lutzenkirchen-Hecht ◽  
Alexander Obraztsov ◽  
...  
Keyword(s):  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Type Silicon ◽  
P Type ◽  
Tungsten Nanoparticles

A field-enhanced generation model for field emission from p-type silicon

1997 ◽  
Vol 18 (12) ◽  
pp. 616-618 ◽  
Author(s):  
Qing-An Huang ◽  
Ming Qin ◽  
Bin Zhang ◽  
J.K.O. Sin ◽  
M.C. Poon
Keyword(s):  
Field Emission ◽  
Generation Model ◽  
Type Silicon ◽  
P Type

Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon

2004 ◽  
Vol 85 (15) ◽  
pp. 3277-3279 ◽  
Author(s):  
S. Johnson ◽  
A. Markwitz ◽  
M. Rudolphi ◽  
H. Baumann ◽  
S. P. Oei ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanostructures ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Type Silicon ◽  
Self Assembled ◽  
P Type

The Formation of Highly Conductive Shallow Junction Layers in (100) Siliconl By Gallium Ion Implantation

1986 ◽  
Vol 71 ◽  
Author(s):  
H.B. Harrison ◽  
Y.H. Li ◽  
G.A. Sai-Halasz ◽  
S. Iyer
Keyword(s):  
Ion Implantation ◽  
Comparative Study ◽  
Electrical Activation ◽  
Shallow Junction ◽  
Type Silicon ◽  
Thermally Processed ◽  
Long Time ◽  
P Type ◽  
Ion Implanted

AbstractThis paper presents the results obtained from a comparative study of ion implanted Gallium (Ga) into (100), n type Silicon. A comparison is made between long time (≥ 30 mins) furnace annealed and Rapid Thermally Processed (RTP), 100keV implants of 1 and 3×10l5/cm2 doses of Ga. The results show that for RTP an extremely high substitutional concentration of Gallium, in excess of 3×1020/cm3 can be obtained with approximately 100% electrical activation, resulting in highly conductive very shallow p type layers.

Band-Bending Effects on Field Electron Emission From N- and P-Type Silicon Gated Emitter Tips

1999 ◽  
Vol 558 ◽  
Author(s):  
T. Matsukawa ◽  
K. Tokunaga ◽  
S. Kanemaru ◽  
J. Itoh
Keyword(s):  
Field Emission ◽  
Potential Barrier ◽  
Device Simulation ◽  
Surface States ◽  
Emission Characteristics ◽  
Band Bending ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTField emission characteristics from n- and p-type silicon gated emitter tips have been investigated in detail by means of experiments and theoretical estimation of band-bending induced by surface states. Single-tip emitters have been fabricated from n- and p-type silicon and their current-voltage characteristics have been evaluated. The field emission from the p-type emitter has been found to occur at lower extraction voltage than that of the n-type emitter. As the theoretical approach to the origin of the phenomena, potential distribution in the emitter tips has been calculated by using device simulation technique. The surface states of the n-type emitter tip are negatively charged and form a potential barrier against the electrons. On the contrary, there is no potential barrier in the p-type tips. The potential barrier in the n-type tip prevents electrons from reaching the tip apex. This is the reason why the emission current of the n-type emitter was suppressed lower than that of the p-type emitter.

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