Energetic and Electronic Properties of (0001) Inversion Domain Boundaries in ZnO

2017 ◽  
Vol 255 (4) ◽  
pp. 1700429 ◽  
Author(s):  
Siqian Li ◽  
Huaping Lei ◽  
Zhuo Wang ◽  
Jun Chen ◽  
Pierre Ruterana
Keyword(s):  
Electronic Properties ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Structure and Properties of Inversion Domain Boundaries in β-Sic

1989 ◽  
Vol 159 ◽  
Author(s):  
W. R. L. Lambrecht ◽  
C. H. Lee ◽  
B. Segall
Keyword(s):  
Total Energy ◽  
Electronic Properties ◽  
Localized States ◽  
Diamond Structure ◽  
Structure And Properties ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries ◽  
Energy Of Formation ◽  
The Ideal

ABSTRACTThe structure of inversion domain boundaries in β-SiC (i.e. boundaries between domains with inverted Si and C positions) is investigated by means of a Keating model. For the (110) boundary, the relaxation of the C-C and Si-Si bonds towards the ideal bond lengths which occur in the diamond structure can basically be achieved by a rotation of neighboring Si-C bonds. For the (001) boundary, it is achieved by varying the spacing between the domains. The electronic properties and total energy of formation of the relaxed (110) boundary are studied by means of linear muffin-tin orbital calculations. The interface localized states in the semiconducting gap are mainly due to the Si-Si bonds and lead to a semimetallic situation near the interface.

Inversion domain boundaries in Mn and Al dual-doped ZnO: Atomic structure and electronic properties

2017 ◽  
Vol 100 (9) ◽  
pp. 4252-4262 ◽  
Author(s):  
Joshua Hoemke ◽  
Eita Tochigi ◽  
Tetsuya Tohei ◽  
Hidehiro Yoshida ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Atomic Structure ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Doped Zno ◽  
Inversion Domain Boundaries

scholarly journals Inversion domain boundaries in wurtzite GaN

2021 ◽  
Vol 103 (16) ◽  
Author(s):  
M. M. F. Umar ◽  
Jorge O. Sofo
Keyword(s):  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

Junction lines of inversion domain boundaries with stacking faults in GaN

2004 ◽  
Vol 70 (11) ◽  
Author(s):  
J. Kioseoglou ◽  
G. P. Dimitrakopulos ◽  
Ph. Komninou ◽  
H. M. Polatoglou ◽  
A. Serra ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Microstructral Investigations on GaN Films Grown by Laser Induced Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
H. Zhou ◽  
F. Phillipp ◽  
M. Gross ◽  
H. Schröder
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Threading Dislocations ◽  
Planar Defects ◽  
Sapphire Substrates ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Line Defects ◽  
Inversion Domain Boundaries

AbstractMicrostructural investigations on GaN films grown on SiC and sapphire substrates by laser induced molecular beam epitaxy have been performed. Threading dislocations with Burgers vectors of 1/3<1120>, 1/3<1123> and [0001] are typical line defects, predominantly the first type of dislocations. Their densities are typically 1.5×1010 cm−2 and 4×109 cm−2 on SiC and sapphire, respectively. Additionally, planar defects characterized as inversion domain boundaries lying on {1100} planes have been observed in GaN/sapphire samples with an inversion domain density of 4×109 cm−2. The inversion domains are of Ga-polarity with respect to the N-polarity of the adjacent matrix. However, GaN layers grown on SiC show Ga-polarity. Possible reasons for the different morphologies and structures of the films grown on different substrates are discussed. Based on an analysis of displacement fringes of inversion domains, an atomic model of the IDB-II with Ga-N bonds across the boundary was deduced. High resolution transmission electron microscopy (HRTEM) observations and the corresponding simulations confirmed the IDB-II structure determined by the analysis of displacement fringes.

Inversion Domain Boundaries in GaN Grown on Sapphire

1996 ◽  
Vol 449 ◽  
Author(s):  
L. T. Romano ◽  
J.E. Northrup
Keyword(s):  
Dark Field ◽  
Hydride Vapor Phase Epitaxy ◽  
Dark Field Imaging ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Convergent Beam ◽  
Inversion Domain Boundaries ◽  
Field Imaging ◽  
Beam Diffraction

ABSTRACTInversion domain boundaries (IDBs) in GaN grown on sapphire (0001) were studied by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam diffraction. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all found to contain IDBs. Inversion domains (IDs) that extended from the surface to the interface were found to be columnar with facets on the {10–10} and {11–20} planes. Other domains ended within the film that formed IDBs on the (0001) and {1–102} planes. The domains were found to grow in clusters and connect at points along the boundary.

Atomic Structures of Oxygen-associated Defects in Sintered Aluminum Nitride Ceramics

1999 ◽  
Vol 5 (5) ◽  
pp. 352-357 ◽  
Author(s):  
Yanfa Yan ◽  
S. J. Pennycook ◽  
M. Terauchi ◽  
M. Tanaka
Keyword(s):  
Stacking Sequence ◽  
Contrast Imaging ◽  
Octahedral Layer ◽  
Atomic Structures ◽  
Inversion Domain ◽  
Sintered Aluminum ◽  
Domain Boundaries ◽  
Convergent Beam ◽  
Z Contrast ◽  
Inversion Domain Boundaries

Convergent-beam electron diffraction and Z-contrast imaging are used to study oxygen-associated defects, flat inversion domain boundaries, dislocations, and interfaces in sintered AlN ceramics. The structures of these defects are directly derived from atomic-resolution Z-contrast images. The flat inversion domain boundaries contain a single Al-O octahedral layer and have a stacking sequence of . . .bAaB-bAc-CaAc. . , where -cAb- indicates the single octahedral layer. The expansion at the flat inversion domain boundaries is measured to be 0.06 (±0.02) nm. The interfaces between 2H- and polytypoid-AlN are found to be also inversion domain boundaries but their stacking sequence differs from that of the flat inversion domain boundaries.

scholarly journals Zigzag Inversion Domain Boundaries in Indium Zinc Oxide-Based Nanowires: Structure and Formation

ACS Nano ◽  
2013 ◽  
Vol 7 (12) ◽  
pp. 10747-10751 ◽  
Author(s):  
Anna P. Goldstein ◽  
Sean C. Andrews ◽  
Robert F. Berger ◽  
Velimir R. Radmilovic ◽  
Jeffrey B. Neaton ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Indium Zinc Oxide ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries
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