The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

2015 ◽  
Vol 252 (9) ◽  
pp. 1960-1965 ◽  
Author(s):  
S. Ardali ◽  
G. Atmaca ◽  
S. B. Lisesivdin ◽  
T. Malin ◽  
V. Mansurov ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Temperature Dependent ◽  
Gan Heterostructure

Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

2018 ◽  
Vol 113 ◽  
pp. 147-152 ◽  
Author(s):  
Apurba Chakraborty ◽  
Saptarsi Ghosh ◽  
Partha Mukhopadhyay ◽  
Subhashis Das ◽  
Ankush Bag ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Temperature Dependent ◽  
Gan Heterostructure ◽  
Trapped Charge

Charge carrier concentration and temperature dependent recombination in polymer-fullerene solar cells

2009 ◽  
Vol 95 (5) ◽  
pp. 052104 ◽  
Author(s):  
A. Foertig ◽  
A. Baumann ◽  
D. Rauh ◽  
V. Dyakonov ◽  
C. Deibel
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration ◽  
Temperature Dependent

scholarly journals Synergistic boost of output power density and efficiency in In-Li–codoped SnTe

2019 ◽  
Vol 116 (44) ◽  
pp. 21998-22003 ◽  
Author(s):  
Fengkai Guo ◽  
Haijun Wu ◽  
Jianbo Zhu ◽  
Honghao Yao ◽  
Yang Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Power Density ◽  
Output Power ◽  
Traditional Method ◽  
Lattice Thermal Conductivity ◽  
Heat Output ◽  
Leg Length ◽  
Temperature Dependent ◽  
High Carrier Concentration ◽  
High Carrier

We report enhanced thermoelectric performance of SnTe by further increasing its intrinsic high carrier concentration caused by Sn vacancies in contrast to the traditional method. Along with In2Te3 alloying, which results in an enhanced Seebeck coefficient, Li2Te is added to further increase the carrier concentration in order to maintain high electrical conductivity. Finally, a relatively high PFave of ∼28 μW cm−1 K−2 in the range between 300 and 873 K is obtained in an optimized SnTe-based compound. Furthermore, nanoprecipitates with extremely high density are constructed to scatter phonons strongly, resulting in an ultralow lattice thermal conductivity of ∼0.45 W m−1 K−1 at 873 K. Given that the Z value is temperature dependent, the (ZT)eng and (PF)eng values are adopted to accurately predict the performance of this material. Taking into account the Joule and Thomson heat, output power density of ∼5.53 W cm−2 and leg efficiency of ∼9.6% are calculated for (SnTe)2.94(In2Te3)0.02-(Li2Te)0.045 with a leg length of 4 mm and cold- and hot-side temperatures of 300 and 870 K, respectively.

Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure

2004 ◽  
Vol 831 ◽  
Author(s):  
W. Wang ◽  
J. Derluyn ◽  
M. Germain ◽  
I. Dewolf ◽  
M. Leys ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Layer Thickness ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Algan Layer ◽  
Polarization Model ◽  
Quantitative Results ◽  
Gan Heterostructure ◽  
Interesting Behavior

ABSTRACTThe effect of surface passivation on undoped AlGaN/GaN heterostructures using SiO2, Al2O3, Ta2O5 and Si3N4 as a function of layer thickness is presented. It is found that all of the oxides caused decreased 2DEG carrier concentration with increasing thickness of the respective oxide layers between the gate and AlGaN layer. On the contrary, the 2DEG carrier concentration increased strongly with increasing Si3N4 layer thickness. An elementary polarization model was used to fit the behavior for all materials and thicknesses leading to quantitative results. The fitting suggests that the effect of the oxides and Si3N4 on the 2DEG carrier concentration can be explained by the differences between them with respect to charge accumulation at the AlGaN/dielectric interface. High temperature in-situ deposited Si3N4 especially shows interesting behavior by bowing measurements as it also adds strain which increases piezoelectric polarization charge in AlGaN layer, so that increases the charge density in the 2DEG.

Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility

2014 ◽  
Vol 10 (6) ◽  
pp. 1087-1092 ◽  
Author(s):  
Palash Das ◽  
Nripendra N. Halder ◽  
Rahul Kumar ◽  
Sanjay Kr. Jana ◽  
Sanjib Kabi ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Electron Gas ◽  
Dimensional Electron ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure

2016 ◽  
Vol 108 (6) ◽  
pp. 063503 ◽  
Author(s):  
Yong Xiang ◽  
Xinjuan Chen ◽  
Cheng Ji ◽  
Xuelin Yang ◽  
Fujun Xu ◽  
...  
Keyword(s):  
Temperature Dependent ◽  
Dependent Polarization ◽  
Polarization Characteristics ◽  
Gan Heterostructure

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

2016 ◽  
Vol 858 ◽  
pp. 1170-1173 ◽  
Author(s):  
Giuseppe Greco ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Schottky Barrier Height ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57 eV (TiN/Ti/Al) and 1.89 eV (Ni/Au). Hence, choosing the highest barrier height contact (Ti/Al) as gate electrode on a p-GaN/AlGaN/GaN heterostructure, optimized based on simulations, allowed to obtain devices with a normally-off behavior and a positive Vth of +1.3 V.

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