Efficiency droop and carrier transport in AlGaN epilayers and heterostructures

2015 ◽  
Vol 252 (5) ◽  
pp. 961-964 ◽  
Author(s):  
J. Mickevičius ◽  
G. Tamulaitis ◽  
J. Jurkevičius ◽  
M. S. Shur ◽  
M. Shatalov ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Efficiency Droop

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

2011 ◽  
Vol 99 (25) ◽  
pp. 251115 ◽  
Author(s):  
David S. Meyaard ◽  
Guan-Bo Lin ◽  
Qifeng Shan ◽  
Jaehee Cho ◽  
E. Fred Schubert ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Light Emitting

scholarly journals The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes

2017 ◽  
Vol 122 (23) ◽  
pp. 234505 ◽  
Author(s):  
M. A. Hopkins ◽  
D. W. E. Allsopp ◽  
M. J. Kappers ◽  
R. A. Oliver ◽  
C. J. Humphreys
Keyword(s):  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Abc Model ◽  
Light Emitting

scholarly journals The Effect of Imbalanced Carrier Transport on the Efficiency Droop in GaInN-Based Blue and Green Light-Emitting Diodes

Energies ◽  
2017 ◽  
Vol 10 (9) ◽  
pp. 1277 ◽  
Author(s):  
Jun Hyuk Park ◽  
Jaehee Cho ◽  
E. Fred Schubert ◽  
Jong Kyu Kim
Keyword(s):  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Efficiency Droop ◽  
Light Emitting

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

2012 ◽  
Author(s):  
David S. Meyaard ◽  
Guan-Bo Lin ◽  
Qifeng Shan ◽  
Jaehee Cho ◽  
E. Fred Schubert ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Light Emitting

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Carrier Transport in 2-D Materials: an Ab Initio Study

2019 ◽  
Author(s):  
Mathieu Luisier ◽  
Aron Szabo ◽  
Cedric Klinkert ◽  
Christian Stieger ◽  
Martin Rau ◽  
...  
Keyword(s):  
Ab Initio ◽  
Carrier Transport ◽  
Ab Initio Study

Limits of Charge Carrier Transport in Halide Perovskites Revealed by Optical-Pump Terahertz-Probe Spectroscopy

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Optical Pump ◽  
Halide Perovskites ◽  
Probe Spectroscopy
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